1999
DOI: 10.1016/s0955-2219(98)00401-4
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Effect of Nb, Li doping on structure and piezoelectric properties of PZT type ceramics

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Cited by 33 publications
(14 citation statements)
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“…According to the previous references, Nb 2 O 5 is a good donor dopant for PZT-based ceramics, which will increase the mobility of the domain walls. 28 The defect chemistry reaction is supposed to take place via the following equations, which reduce the concentration of oxygen vacancy, which is the main factor for pinning the mobility of domain walls. 29 Nb 2 O 5 + VÖ 2TiO 2 −→ 2Nb Ti + 5O O High values of piezoelectric coefficient d 33 and electromechanical coupling coefficient k p in poled PZT-based ceramics are believed to arise from the motion of domain walls under the action of applied field or stress.…”
Section: Discussing Of Resultsmentioning
confidence: 99%
“…According to the previous references, Nb 2 O 5 is a good donor dopant for PZT-based ceramics, which will increase the mobility of the domain walls. 28 The defect chemistry reaction is supposed to take place via the following equations, which reduce the concentration of oxygen vacancy, which is the main factor for pinning the mobility of domain walls. 29 Nb 2 O 5 + VÖ 2TiO 2 −→ 2Nb Ti + 5O O High values of piezoelectric coefficient d 33 and electromechanical coupling coefficient k p in poled PZT-based ceramics are believed to arise from the motion of domain walls under the action of applied field or stress.…”
Section: Discussing Of Resultsmentioning
confidence: 99%
“…The application of piezoelectric materials is almost unlimited and depends only on the skill of the users. It is sufficient to mention the newest and most exciting applications of such ceramics, in piezoelectric micromotors, microrobots, actuators, and the control of displacement and positioning systems, to understand the importance of piezoelectric materials with improved characteristics (Tănăsoiu, Dimitriu, & Miclea, 1999). Researchers also claim that relax or ferroelectrics with AB (1−x) B x O 3 type perovskite has attracted much attention because of their excellent dielectric and electromechanical properties.…”
Section: Introductionmentioning
confidence: 99%
“…[2,5,6]. In the case of Nb-doped PZT materials, it has been stated that substitution of a small amount of Nb 5+ for (Zr,Ti) 4+ increases considerably the bulk resistivity and reduces aging effects, among various effects of relevance [3,[7][8][9][10]. Most electrical characterizations of this Nb-doped PZT system have been, however, conducted mainly on thin films and/or over a restricted range of PZT compositions: the MPB region and the range of Zr-rich PZT compositions (z = 0.03-0.04), the latter falling within the antiferroelectric region of the diagram phase.…”
Section: Introductionmentioning
confidence: 99%