Effect of Nd doping on the refractive index and thermo-optic coefficient of GdVO4 single crystals

Soharab, M.; Bhaumik, Indranil; Bhatt, R.; Saxena, A.; Karnal, A.K.

doi:10.1007/s00340-019-7194-z

Cited by 17 publications

(1 citation statement)

References 32 publications

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“…Therefore, one could deduce that doping accelerates the rate of change in refractive indices, and by extension, the resonance frequency. Regrettably, there are no such data available to corroborate this for YSO, although a study conducted by Soharab et al [33] analyzed the refractive index versus Nd concentration in GdVO 4 , which seems to support the increasing trend of refractive indices with dopant concentration.…”

Section: Resultsmentioning

confidence: 96%

Stress-Induced Refractive Index Change of Eu:Y2SiO5: A Theoretical Approach

Mirzai,

Ahadi

2024

Preprint

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The laser host materials undergo relatively small changes in their intrinsic properties due to various sources during an experiment. These sources are often related to temperature change or applied stress, which may cause change in optical properties of the material under study. Consequently, the crystal experiences an optical anisotropy, which may affect the final outcome of the experiments. One way to reduce probable noises is to predict the change in optical properties with respect to load. To predict the changing pattern of the refractive index in a crystal, one needs to know both the elastic and photoelastic constants of the material. In this study, we utilized density functional perturbation theory (DFPT) to extract the photoelastic tensor of Y$_2$SiO$_5$ and Eu-doped Y$_2$SiO$_5$ crystals. Using the photoelastic and elastic constants calculated, a Finite Element (FE) model was developed, which allowed us to apply load and then post-process the results. This methodology enabled us to observe the variation in refractive index ($n$), and consequently, the shift in the resonance frequency of the cavity. The results obtained were in agreement with experimental measurements, falling within a 3\% discrepancy across a temperature range spanning from cryogenic to room temperature. This correlation suggests the feasibility of using the current workflow as a predictive tool for evaluating variations in refractive indices over a specific interval.

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Section: Resultsmentioning

confidence: 96%

Stress-Induced Refractive Index Change of Eu:Y2SiO5: A Theoretical Approach

Mirzai,

Ahadi

2024

Preprint

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Crystal Interface Control at Low Thermal Gradient and Investigation of the Effect of Cr on the Crystal Structure and Optical Properties of Bismuth Silicate

Bhaumik

Viswanathan

Bhatt

et al. 2021

Physica Status Solidi (b)

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Sillenite structure crystals (general composition Bi 12 XO 20 , X ¼ Si, Ge, and Ti with space group I23) posses a number of properties important for practical applications. [1,2] They are characterized by XO 4 tetrahedra located at the center and corners of its cubic unit cell. These XO 4 tetrahedra are linked with stereochemically active 6s 2 lone electron pair of Bi 3þ via BiO 5 octahedra. [3][4][5] This, along with the absence of inversion symmetry, is the source of outstanding electrical and optical properties suitable for photorefractive applications. [1][2][3][4][5] Among sillenites, bismuth silicate (Bi 12 SiO 20 , BSO) is a technologically important material as it exhibits large electro-optic and photoconductive effects, which make it suitable for optical switches, optics-based electric field sensors, holographic storage, and photorefractive devices. [6][7][8][9][10][11][12][13][14] It is used for two-wave mixing, four-wave mixing, phase conjugation, real-time holography, optical data storage, optical computing, and electro-optical modulation. [7,8] It has been reported that the photorefractive property of BSO is enhanced significantly on doping with metals like Cr, Fe, Mg, Ru, etc. [8,[15][16][17][18][19][20][21][22][23][24][25][26][27] Though most of these dopants make material sensitive to photorefraction in the visible region, especially around 500 nm, that is, 2.5 eV, practical feasibility prefers the region near the infrared (1.5À2 eV), mainly because of the availability of compact laser diodes in this region. [28] Cr doping shifts the photorefractive sensitivity of BSO to the near-infrared region and therefore makes it a potential material for applications like optical image processing, holographic interferometry, optical storage, and phase conjugation. In literature, there are reports on the growth of Cr-doped BSO crystal and investigations on the photorefractive effect, dielectric property, optical activity, Faraday effect, etc. [15][16][17][18][19][20][21][22][23][24] For the growth of the crystal, Czochralski technique has been used as BSO is a congruently melting compound. [25,26] It is known that the devices mentioned earlier require crystals with a low dislocation density and high optical homogeneity. [29] One of the important aspects of growth of crystals having low dislocation density is to grow the crystal with a flat-ish crystalÀmelt interface. [26] A few studies have been reported on undoped BSO for relatively higher thermal gradient. [30,31] However, to obtain large-sized good quality crystal of BSO, a lower thermal gradient is favorable. [32] In view of this, one of the objectives of the work is investigate the effect of the growth condition on the interface shape control of the Cr:BSO crystal when grown along 〈110〉 in the lower axial

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