Effect of Post-Annealing on the Microstructure and Electrical Properties of PMN-PZT Films Prepared by Aerosol Deposition Process

한병동,; 고관호,; 박동수,; 최종진,; 윤운하,; 박찬,; 김도연,

doi:10.4191/kcers.2006.43.2.106

Cited by 4 publications

References 6 publications

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Effects of Pb(Zn1∕3Nb2∕3)O3 addition and postannealing temperature on the electrical properties of Pb(ZrxTi1−x)O3 thick films prepared by aerosol deposition method

Choi

Hahn

Ryu

et al. 2007

Journal of Applied Physics

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Effects of the lead zinc niobate (PZN) addition and postannealing temperature on the electrical properties of the lead zirconate titanate (PZT) films were observed to improve electrical properties of the PZT film. The PZN content was varied from 0% to 40%, and the postannealing temperature was varied from 500to900°C. The as-deposited film had a fairly dense microstructure without any cracking and showed a single perovskite phase formed with nanosized grains. Meanwhile, rapid grain growth was observed when the postannealing temperature was increased from 700to900°C. The PZN-added PZT film showed poorer electrical properties than the pure PZT film did when the films were annealed at 700°C but higher remnant polarization, dielectric constant, and piezoelectric response when the films were annealed at 900°C. Remnant polarization value, relative dielectric constant, and piezoelectric constant of the 20% PZN-added PZT films annealed at 900°C were 50.0μC∕cm2, 1643, and 200pC∕N, respectively, which are values sufficiently high to be comparable with the bulk specimen sintered at 1200°C.

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Effects of Pb(Zn1∕3Nb2∕3)O3 addition and postannealing temperature on the electrical properties of Pb(ZrxTi1−x)O3 thick films prepared by aerosol deposition method

Choi

Hahn

Ryu

et al. 2007

Journal of Applied Physics

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Influence of Zr/Ti Ratio on Electrical Properties of PZT Thick Films Deposited by Aerosol Deposition Process

Hahn

Park

Choi

et al. 2007

2007 Sixteenth IEEE International Symposium on the Applications of Ferroelectrics

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Fabrication of Lead Zirconate Titanate Thick Films Using a Powder Containing Organic Residue

Hahn

Kim

Park

et al. 2008

jjap

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Crack-free, lead zirconate titanate (PZT) films with a thickness range of 20 -100 mm were deposited on silicon substrate by aerosol deposition (AD) process using powders containing 1-12 wt % of organic species prepared by sol-gel route. The asdeposited films were annealed at 700 C for 5 min by rapid thermal annealing (RTA) to improve the electrical properties. No delaminations or cracks were observed in the annealed film, even for a 100-mm-thick film. The organic species was evaporated during the post-annealing process and generated nano-sized pores which seemed to alleviate the residual compressive stress. Furthermore, a high deposition rate of about 3.3 mm/s was achieved on the film area of 5 Â 12 mm 2 due to the incorporation of organic residue. The dielectric constant (" r ), remnant polarization (P r ), and piezoelectric coefficient (d 33 ) of the 20-mm-thick PZT film were 850, 24.0 mC/cm 2 , and 70 pC/N, respectively, after annealing at 700 C for 5 min.

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Effect of Post-Annealing on the Microstructure and Electrical Properties of PMN-PZT Films Prepared by Aerosol Deposition Process

Cited by 4 publications

References 6 publications

Effects of Pb(Zn1∕3Nb2∕3)O3 addition and postannealing temperature on the electrical properties of Pb(ZrxTi1−x)O3 thick films prepared by aerosol deposition method

Effects of Pb(Zn1∕3Nb2∕3)O3 addition and postannealing temperature on the electrical properties of Pb(ZrxTi1−x)O3 thick films prepared by aerosol deposition method

Influence of Zr/Ti Ratio on Electrical Properties of PZT Thick Films Deposited by Aerosol Deposition Process

Fabrication of Lead Zirconate Titanate Thick Films Using a Powder Containing Organic Residue

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