Effect of process parameters on the characteristics of indium tin oxide thin film for flat panel display application

Synthesis and High-Pressure Study of Corundum-Type In2O3

“…1,2 The most widely studied materials employed for optoelectronic devices that accomplish these properties are several binary oxides like: In 2 O 3 , Ga 2 O 3 , Al 2 O 3 , ZnO, SnO 2 and TiO 2 . [3][4][5] The widespread use of In 2 O 3 in industrial processes covers the fabrication of window layers in solar cells, [6][7][8] light-emitting diodes, 9,10 electrochromic windows, 11 liquid-crystal displays, 12,13 and gas sensors. 14,15 Due to the scarcity and high cost to obtain indium metal, new 3 systems, like Sn-doped In 2 O 3 (ITO) and corundum-type In 2-2x Zn x Sn x O 3 (x ≤ 0.4, or ZITO), have been developed to cut the prize of the production system.…”

Dependence of the properties of sputter deposited Al-doped ZnO thin films on base pressure

“…: +82 10 8222 7669; fax: +82 43 229 8461. applied. Previous work on ITO thin films has suggested that chamber base pressure prior to film deposition affects the resistivity of films deposited in the manner [10][11][12].…”

Transparent Electrodes Fabricated via Graphene and Silver Nanowire Hybrid Films

“…However, further development and application of ITO has been receded due to two issues of its scarcity of supply and fragile ceramic nature. [1][2] These two key issues in the use of ITO are being addressed by the emergence of the next generation flexible transparent materials such as conducting polymers, carbon nanotubes (CNTs), graphene, as well as metal nanostructures. [3][4][5][6][7][8] Graphene, a two-dimensional (2D) monolayer sheet of hexagonal sp 2 -hybridized carbon atoms arranged in a honeycomb lattice, has attracted a lot of attention since its experimental discovery in 2004.…”