Effect of Pt bottom electrode texture selection on the tetragonality and physical properties of Ba0.8Sr0.2TiO3 thin films produced by pulsed laser deposition

Abstract

Electric field induced instabilities of thin leaky bilayers: Pathways to unique morphologies and miniaturization J. Chem. Phys. 138, 024705 (2013) Electric field-tunable BaxSr1−xTiO3 films with high figures of merit grown by molecular beam epitaxy Appl. Phys. Lett. 101, 252906 (2012) The penetration limit of poly(4-vinyl phenol) thin films for etching via holes by inkjet printing Appl. Phys. Lett. 101, 253302 (2012) The penetration limit of poly(4-vinyl phenol) thin films for etching via holes by inkjet printing APL: Org. Electron. Photonics 5, 270 (2012) Numerical simulations of electrostatic interactions between an atomic force microscopy tip and a dielectric sample in presence of buried nano-particles J. Appl. Phys. 112, 114313 (2012) Additional information on J. Appl. Phys. The effect of platinum (Pt) bottom electrode texture on the tetragonality, dielectric, ferroelectric, and polarization switching response of pulsed laser deposited Ba 0.8 Sr 0.2 TiO 3 (BST) thin films has been studied. The x-ray diffraction and Raman analysis revealed the higher tetragonality of BST films when they were grown on higher (111) textured Pt layer. The properties like dielectric permittivity, polarization, switching time, and leakage currents were found to be correlated to tetragonality and orientation of the BST films. The polarization current was observed to be higher in BST films on Pt epitaxial layer and it exhibits exponential dependence on the electric field. The voltage-current measurements displayed Ohmic behavior of leakage current irrespective of Pt texture for low voltages (up to 1 V), whereas at higher voltages the conduction mechanism was found to be dependent on texture selection of bottom Pt electrode. V C 2012 American Institute of Physics. [http://dx

Light-controlled resistive switching in laser-assisted annealed Ba0.8 Sr0.2 TiO3 thin films

“…The lattice parameters calculated from the least‐square method for the BST films are a = 3.984 Å and c = 4.005 Å, which gives a lattice distortion ( c/a ) equal to 1.005. This value is similar to the one found in literature for BST (80/20) thin films deposited on platinized substrates at higher temperatures . However, the peak positions of BST layer are slightly shifted to higher 2θ values comparing to that of the target (green lines in Fig.…”

“…As is seen in the inset of Fig. (d), the data in the voltage range between 1.2 and 2.0 V can be well fitted with the PF mechanism and give the appropriate values of ϵ = 3.84, which is in a good agreement with the reported values for BST materials . The charge carrier transport in this region is governed by the photogenerated carriers developed in the whole region of ferroelectric film.…”

“…However, the validity of fittings is determined by the derived dielectric permittivity ( ϵ ). According to PF emission, which is a bulk limited conduction mechanism, the current density is as follows : where J is the leakage current density, A is a constant, E is the electric field, is the trapped level, T is the temperature, q is the electronic charge, V is the applied voltage, ϵ 0 is the free space dielectric constant, ϵ FE is the dielectric permittivity of BST, w is the depletion layer width, and k is the Boltzmann constant. As is seen in the inset of Fig.…”

Enhanced resistive switching characteristics in Pt/BaTiO3/ITO structures through insertion of HfO2:Al2O3 (HAO) dielectric thin layer

“…The work functions of polycrystalline Pt and ITO are 5.6 eV and 4.5 eV, respectively3039. This leads to an electric potential asymmetry, with a rectification ratio of 1.3, in the I-V curves of the Pt/BTO/ITO structures, as one can see in Fig.…”

Highly textured Pt thin film grown at very low temperature using Ca2Nb3O10 nanosheets as seed layer

“…Sakaliuniene et al have also shown that film porosity is reduced and therefore that the resistivity decreases from 85 to 25 µΩ cm when the argon pressure is reduced from 5 to 0.6 Pa [3]. In addition, it has been shown that the deposition temperature of these electrodes has a strong influence on the crystalline quality of the Pt film and thus on the electrical properties of the MFM stack [4][5][6][7][8]. Indeed, the well-ordered structure of the Pt electrode promotes crystal growth of the oxide ferroelectric film.…”