Effect of Pulsed Light Irradiation on Patterning of Reduction Graphene Oxide-Graphene Oxide Interconnects for Power Devices

Abstract

Reduction graphene oxide (r-GO) lines on graphene oxide (GO) films can be prepared by a photocatalytic reduction and photothermal reduction method. A mechanism of partial GO reduction by pulsed photon energy is identified for preparing patterned rGO-GO films. The photocatalytic reduction method efficiently reduces GO at low photon energies. The successful production of a patterned rGO-GO film without damage by the photo thermal reduction method is possible when an energy density of 6.0 or 6.5 J/m2 per pulse is applied to a thin GO film (thickness: 0.45 μm). The lowest resistance obtained for a photo-reduced rGO line is 0.9 kΩ sq−1. The GO-TiO2 pattern fabricated on the 0.23 μm GO-TiO2 composite sheet through the energy density of each pulse is 5.5 J/m2 for three pulses.