2018
DOI: 10.14419/ijet.v7i4.10110
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Effect of radius on various parameters of cylindrical surrounding double-gate (CSDG) MOSFET

Abstract: The MOSFET is an integral component of electronics device and scaling the device is continuously in progress. This research work intro-duces a novel structure of the Cylindrical Surrounding Double-Gate (CSDG) MOSFET to improve scaling and to suppress Short Channel Effect (SCE). In order to achieve this improvement, the drift-diffusion components are used to analyze the drain current of the device through the Pao-Sah integral. Then transconductance is derived to indicate an improved performance of the proposed … Show more

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