Effect of sintering temperature on thermoelectric properties of CdO ceramics

Zhang, Xinran; Li, Huiling; Wang, Jianglong

doi:10.1007/s40145-015-0153-1

Cited by 15 publications

(23 citation statements)

References 27 publications

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“…3. The ρ (T) curves show a metallic-like behaviour (dρ/dT < 0) from room temperature to about 700 ºC and a semiconducting-like one (dρ/dT > 0) at higher temperatures, in agreement with the observed behaviour in solid state sintered materials [17,19,32]. This behaviour has been associated to an extrinsic regime at low temperatures (< 700 ºC) where the charge carrier density has been found to be nearly independent of temperature.…”

Section: Results and Discusionsupporting

confidence: 80%

“…The obtained values are around 99.5 % of CdO theoretical density, with 0.14 g/cm 3 standard error, clearly confirming the very low porosity content in these samples. These values are higher than the reported in the literature for solid state sintered samples at 800 and 900 ºC (97.7, and 98.7 %, respectively) [19,27,28].…”

Section: Results and Discusioncontrasting

confidence: 70%

“…This evolution clearly fits with the electrical resistivity discussion, it increases within the extrinsic carriers temperature range and decreases in the intrinsic one. The room temperature values (-75 V/K) are of the order of the obtained in solid state sintered pure CdO (between -60 and -75 V/K) [17,19], but lower than the best measured in Ba-doped materials (-160 V/K) [27]. When…”

Section: Results and Discusionmentioning

confidence: 66%

“…On the other hand, the decrease found at higher temperatures (> 700 ºC) is due to the promotion of thermally excited intrinsic carriers through the energy gap [34]. In any case, the measured value at room temperature in the hot-pressed materials (1.3 mΩ.cm) is much lower than the best reported in the literature for the solid state sintered pure CdO (11 mΩ.cm) [19] and still lower than the lowest measured in Er-or Pr-doped CdO (2 mΩ.cm) [17,18]. When considering the high temperature values, the measured in the materials prepared in this work (1.3 mΩ.cm at 800 ºC) are much lower than the obtained in sintered materials at similar temperature (18 mΩ.cm) and about the half of the best measured in Er-or Pr-doped materials (4 mΩ.cm) [17,18].…”

Section: Results and Discusionmentioning

confidence: 85%

“…From this moment on, many works have been published on CoO-based materials [8][9][10][11][12][13][14] with hole conduction behavior. On the other hand, the search for a high performance TE material with electronic conduction behavior is being performed in different systems, as TiO-, or MnO-based ones [15,16], while very few works are being conducted in other materials, such as CdO [17][18][19].…”

Section: Introductionmentioning

confidence: 99%

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High mechanical and thermoelectric performances in hot-pressed CdO

Madre

Torres

Sotelo

2016

J Mater Sci: Mater Electron

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High density bulk CdO polycrystalline thermoelectric ceramics have been prepared through a hot-pressing process. Density measurements have revealed that density reaches 99.5 % of the theoretical one, in agreement with the observed microstructure. Microhardness has shown to have indentation size effect, decreasing when the load is raised. Electrical resistivity shows metalliclike behaviour until 650 ºC and semiconducting-like at higher temperatures while Seebeck coefficient increases in the metallic-like region and decreases in the semiconducting one. The maximum power factor values, 1.6 mW/K 2 m, have been achieved at about 650 ºC. These values are the highest obtained in this family of materials, with the advantage of its low thermal treatment duration, when compared with the typical solid state sintering process.

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Section: Results and Discusionsupporting

confidence: 80%

Section: Results and Discusioncontrasting

confidence: 70%

Section: Results and Discusionmentioning

confidence: 66%

Section: Results and Discusionmentioning

confidence: 85%

Section: Introductionmentioning

confidence: 99%

See 3 more Smart Citations

High mechanical and thermoelectric performances in hot-pressed CdO

Madre

Torres

Sotelo

2016

J Mater Sci: Mater Electron

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Electrical Property Enhancement in Orientation‐Modulated Perovskite La‐Doped SrTiO₃ Thermoelectric Thin Films

Chen

Zhou

Yang

et al. 2023

Adv Funct Materials

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Thermoelectric oxide thin films are promising in chip cooling. The issues on the orientation of thin films are essential as they are related to the structures, morphologies, and thermoelectric properties. In this regard, the orientation modulation is conducted on La‐doped SrTiO3 thin films on (LaAlO3)0.3(Sr2TaAlO6)0.7 (LSAT) single crystal substrates. Layer‐by‐layer growth mode is found in (001)‐ and (110)‐ oriented thin films, resulting in few grain boundaries (GBs). In (111)‐oriented films, island growth mode leads to columnar grain boundaries that build up potential barriers for electrons to be strongly scattered and filtered, suppressing electron mobility and increasing effective mass. In addition, the GBs serve as oxygen vacancy diffusion paths when annealing, causing increased carrier concentration and lattice contraction. The weighted mobility of 71.9 cm2 V−1 s−1 and electrical conductivity of ≈600 S cm−1 are realized in the (001)‐oriented film at room temperature. Ultimately, outstanding power factor values of ≈569 µW m−1 K−2 (room temperature) and ≈791 µW m−1 K−2 (573 K) are successfully achieved, outperforming those in polycrystalline ceramics and (111)‐oriented films. This study systematically investigates the influence of grain boundaries and orientations on SrTiO3‐based thermoelectric films, which lays a solid foundation for improving thermoelectric performance in other oxide thin films.

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