Effect of size quantization on the effective mass in ultrathin films ofn-Cd3As2

Chakravarti, A. N.; Ghatak, K. P.; Ghosh, Koushik; Ghosh, S.; Dhar, A. K.

doi:10.1007/bf01441297

Cited by 34 publications

(4 citation statements)

References 11 publications

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“…1, we suggest the methods of experimental determinations of the second-and third-order carrier contribution to the elastic constants, the Debye screening length and the Einstein relation, respectively. Additionally, for the purpose of investigating at least one ES-dependent electronic property in this case, we have also investigated the effective electron mass (EEM) which is a very important transport quantity [65][66][67][68][69][70][71][72][73][74].…”

Section: Because the Es Which Controls The Charge Carrier Properties ...mentioning

confidence: 99%

Heisenberg’s Uncertainty Principle and the Electron Statistics in Quantized Structures

Ghatak

Mitra

Biswas

2022

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Section: Because the Es Which Controls The Charge Carrier Properties ...mentioning

confidence: 99%

Heisenberg’s Uncertainty Principle and the Electron Statistics in Quantized Structures

Ghatak

Mitra

Biswas

2022

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“…It is the effective momentum mass which enters in various transport coefficients and plays the most dominant role in explaining the experimental results under different scattering mechanisms [5][6][7][8]. In recent years, the EMM in such materials under different external conditions has been studied extensively [9][10][11][12][13][14][15][16][17][18][19][20][21][22][23][24][25][26]. Under degenerate conditions, only the electrons at the Fermi surface of n-type semiconductors participate in the conduction process and, hence, the effective momentum mass (EMM) of the electrons corresponding to the Fermi level would be of interest in electron transport under such conditions.…”

Section: Effective Electron Massmentioning

confidence: 99%

Applications and Brief Review of Experimental Results

Ghatak¹,

Bhattacharya²

2010

Thermoelectric Power in Nanostructured Materials

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In this book, we have discussed many aspects of TPSM based on the dispersion relations of the nanostructures of different technologically important materials having different band structures in the presence of 1D, 2D, and 3D confinements of the wave-vector space of the charge carriers, respectively. In this chapter, we discuss few applications in this context in Sect. 14.2 and we shall also present a very brief review of the experimental investigations in Sect. 14.3 which is a sea in itself. Section 14.4 contains the single experimental open research problem.

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“…Combining equation (30) with the Fermi-Dirac occupation probability factor and using the generalized Sommerfeld's lemma [50], the electron concentration can be written as…”

Section: The Formulation Of the Emm In The Presence Of Light Waves In...mentioning

confidence: 99%

“…It has, therefore, different values in different materials and varies with electron concentration, with the magnitude of the reciprocal quantizing magnetic field under magnetic quantization, with the quantizing electric field as in inversion layers, with the nanothickness as in quantum wells and quantum well wires and with superlattice period as in the quantum confined superlattices of small gap semiconductors with graded interfaces having various carrier energy spectra. The nature of these variations has been investigated by Ghatak et al [18][19][20][21][22][23][24][25][26][27][28][29][30] and a few others [31][32][33][34][35]. Some of the significant features which have emerged from these studies are:…”

Section: Introductionmentioning

confidence: 99%

A simple theoretical analysis of the effective electron mass in III–V, ternary and quaternary materials in the presence of light waves

et al. 2007

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We present a simple theoretical analysis of the effective electron mass (EEM) at the Fermi level for III-V, ternary and quaternary materials, on the basis of a newly formulated electron energy spectra in the presence of light waves whose unperturbed energy band structures are defined by the three-band model of Kane. The solution of the Boltzmann transport equation on the basis of this newly formulated electron dispersion law will introduce new physical ideas and experimental findings under different external conditions. It has been observed that the unperturbed isotropic energy spectrum in the presence of light changes into an anisotropic dispersion relation with the energy-dependent mass anisotropy. In the presence of light, the conduction band moves vertically upward and the band gap increases with the intensity and colours of light. It has been found, taking n-InAs, n-InSb, n-Hg 1−x Cd x Te and n-In 1−x Ga x As y P 1−y lattice matched to InP as examples, that the EEM increases with increasing electron concentration, intensity and wavelength in various manners. The strong dependence of the effective momentum mass (EMM) at the Fermi level on both the light intensity and wavelength reflects the direct signature of the light waves which is in contrast with the corresponding bulk specimens of the said materials in the absence of photo-excitation. The rate of change is totally band-structure-dependent and is influenced by the presence of the different energy band constants. The well known result for the EEM at the Fermi level for degenerate wide gap materials in the absence of light waves has been obtained as a special case of the present analysis under certain limiting conditions, and this compatibility is the indirect test of our generalized formalism.

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Effect of size quantization on the effective mass in ultrathin films ofn-Cd3As2

Cited by 34 publications

References 11 publications

Heisenberg’s Uncertainty Principle and the Electron Statistics in Quantized Structures

Heisenberg’s Uncertainty Principle and the Electron Statistics in Quantized Structures

Applications and Brief Review of Experimental Results

A simple theoretical analysis of the effective electron mass in III–V, ternary and quaternary materials in the presence of light waves

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