Effect of Small Microfabrication Damage on Optical Characteristics of Laser Structure with GaInNAs Quantum Well

Abstract

We investigate the effect of micro-fabrication process damage on the photoluminescence characteristics of laser structures containing a GaInNAs and GaInAs quantum wells. By varying the size of the fabricated island structure, its impact on the photoluminescence intensity is studied. The GaInAs sample shows a strong decrease in its intensity with the reduction of the island size. In contrast, a slight increase is observed from the GaInNAs sample. This indicates the negligible impact of surface recombination on the GaInNAs sample, as well as the optical confinement within the micrometer-size island structure. The results suggest the feasibility of a GaInNAs gain medium for application to microfabricated optical devices.

Improved luminescence from tensile-strained compound semiconductor quantum wells with dielectric-rod photonic crystals

“…After growth, the sample was annealed in situ in the growth chamber at 680 °C for 30 min to improve its optical properties. 21) The PC on the surface was fabricated by inductively coupled plasma etching using a Cl 2 /BCl 3 /CH 4 gas mixture. 22) The PC rods were patterned using electron beam lithography through a Cr mask.…”