Effect of Space Radiation on the Leakage Current of MEMS Insulators

Patton, Steven T.; Frasca, Albert J.; Talnagi, J.W.; Hyman, Daniel; Phillips, Benjamin S.; Jones, John G.; Vaia, Richard A.; Voevodin, Andrey A.

doi:10.1109/tns.2013.2263840

Cited by 17 publications

(9 citation statements)

References 59 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Temperature affects the conductivity of the dielectric material, while the applied voltage affects the strength of the electric field across the dielectric material. [ 65–68 ]…”

Section: Resultsmentioning

confidence: 99%

Electrical and Mechanical Behavior of Aerosol Jet–Printed Gold on Alumina Substrate for High‐Temperature Applications

et al. 2023

View full text Add to dashboard Cite

There is a growing interest in the development of microelectronics that can perform reliably and robustly at temperatures above 300 °C. Such devices require stable thermal properties, low thermal drift, and thermal cycling resistance. Conventional hybrid circuit technology demonstrates high‐temperature packages, but the high costs and lead time are significant drawbacks. In contrast, additive manufacturing processes, including aerosol jet printing (AJP), offer cost and time benefits, as well as 3D structures and embedded features. However, the properties and reliability of additive packaging materials at extreme temperatures are not well known. Herein, the reliability at temperatures up to 750 °C in terms of electrical performance and mechanical strength of aerosol jet printed gold thick films onto ceramic substrates are assessed. Thermal coefficient of resistance of printed gold films is measured. The electrical resistance stability and leakage current of printed gold structures are also characterized during over 100 h of aging at temperatures up to 750 °C. Finally, the mechanical adhesion strength of the printed gold films is evaluated after aging for 100 h at temperatures up to 750 °C. The adhesion of the printed gold to the ceramic substrates remains high after aging, very stable resistances and minimal leakage currents have been observed.

show abstract

“…Temperature affects the conductivity of the dielectric material, while the applied voltage affects the strength of the electric field across the dielectric material. [ 65–68 ]…”

Section: Resultsmentioning

confidence: 99%

Electrical and Mechanical Behavior of Aerosol Jet–Printed Gold on Alumina Substrate for High‐Temperature Applications

et al. 2023

View full text Add to dashboard Cite

show abstract

“…R FSL is a function of the on resistance of the switches used to realise the switched capacitor converter, and how the charge is transferred in the converter. In [16], FSL is defined by   (7) where a r j,i is a vector that defines how much charge is transferred by switches in each of the converter's phases, r i is the on resistance of the different switches, and D j is the duty cycle of each phase.…”

Section: Switch Capacitor Converter Equivalent Modelmentioning

confidence: 99%

“…As MEMS microphones are based on the capacitance between two plates, the only power consumption is the current leakage in the MEMS module. The current leakage is generally very small, and for a MEMS capacitor of 500 µm × 500 µm with an electric field of 2 MV/cm, the leakage was measured to be less than 1 nA [7]. Hence, the charge pump does not need to deliver significant power, as air gaps of multiple µm are common [1].…”

Section: Introductionmentioning

confidence: 99%

Analysis of Charge Pump Topologies for High Voltage Mobile Microphone Applications

Toft

Jørgensen

2021

ELEKTRON ELEKTROTECH

View full text Add to dashboard Cite

This paper presents a novel analysis of charge pump topologies for very high voltage capacitive drive micro electro-mechanical system microphones. For the application, the size and power consumption are sought to be minimized, and a voltage gain of 36 is achieved from a 5 V supply. The analysis compares known charge pump topologies, taking into consideration on resistance of transistors and parasitic capacitances of transistors and capacitors in a 180 nm silicon-on-insulator process. The analysis finds that the Pelliconi charge pump topology is optimal for generating very high bias voltages for micro electro-mechanical system microphones from a low supply voltage when the power consumption and area are limited by the application.

show abstract

“…[ 41 ] Some recent work has measured the performance of piezoelectric sensors in neutron and gamma environments, the effects of space radiation on MEMS insulators, gamma radiation effects on piezoresistive pressure sensors, accelerometer performance in nuclear reactors, and changes in the mechanical characteristics. [ 24,37,44–46 ] The influence of X‐ray radiation on the gauge factors of statically suspended GaN/AlN beams has also been reported. [ 47 ]…”

Section: Introductionmentioning

confidence: 99%

Impact of Silicon Ion Irradiation on Aluminum Nitride‐Transduced Microelectromechanical Resonators

Lynes,

Young,

Lang

et al. 2023

Adv Materials Inter

View full text Add to dashboard Cite

Microelectromechanical systems (MEMS) resonators use is widespread, from electronic filters and oscillators to physical sensors such as accelerometers and gyroscopes. These devices' ubiquity, small size, and low power consumption make them ideal for use in systems such as CubeSats, micro aerial vehicles, autonomous underwater vehicles, and micro‐robots operating in radiation environments. Radiation's interaction with materials manifests as atomic displacement and ionization, resulting in mechanical and electronic property changes, photocurrents, and charge buildup. This study examines silicon (Si) ion irradiation's interaction with piezoelectrically transduced MEMS resonators. Furthermore, the effect of adding a dielectric silicon oxide (SiO2) thin film is unveiled. Aluminum nitride on silicon (AlN‐on‐Si) and AlN‐SiO2‐Si bulk acoustic wave (BAW) resonators are designed and fabricated. The devices are irradiated using 2 MeV Si+ ions at various fluxes up to a total fluence of 5 × 1014 cm−2. A time anneal is conducted to characterize device recovery. Scattering (S‐) parameters are measured in situ. Specific damage coefficients are derived to describe the radiation effect on resonant frequency (fr), quality factor (Q), motional resistance (Rm), and electromechanical coupling factor (). Furthermore, the damage coefficients for the bulk material properties of elastic modulus (E) and the piezoelectric coefficient (d31) are found.

show abstract

Effect of Space Radiation on the Leakage Current of MEMS Insulators

Cited by 17 publications

References 59 publications

Electrical and Mechanical Behavior of Aerosol Jet–Printed Gold on Alumina Substrate for High‐Temperature Applications

Electrical and Mechanical Behavior of Aerosol Jet–Printed Gold on Alumina Substrate for High‐Temperature Applications

Analysis of Charge Pump Topologies for High Voltage Mobile Microphone Applications

Impact of Silicon Ion Irradiation on Aluminum Nitride‐Transduced Microelectromechanical Resonators

Contact Info

Product

Resources

About