Effect of substrate temperature on electrical, structural, optical and cathodoluminescent properties of In2O3-Sn thin films prepared by spray pyrolysis

Hichou, A. El; Kachouane, A.; Bubendorff, Jean-Luc; Addou, M.; Ebothé, J.; Troyon, M.; Bougrine, A.

doi:10.1016/j.tsf.2003.12.067

Cited by 89 publications

(33 citation statements)

References 36 publications

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“…It is seen that there is considerable amount of shift in the optical band edge with the increase in the transparency of the samples. The shifting of the direct optical transition towards the shorter wavelengths is due to the Burstein-Moss effect [28] and is also reported by others [29,30].…”

Section: Hall Effectsupporting

confidence: 76%

Effect of precursor concentration on the properties of ITO thin films

Moholkar

Pawar

Rajpure

et al. 2008

Journal of Alloys and Compounds

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Section: Hall Effectsupporting

confidence: 76%

Effect of precursor concentration on the properties of ITO thin films

Moholkar

Pawar

Rajpure

et al. 2008

Journal of Alloys and Compounds

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“…CL emission at about 1.90 eV also appears in In 2 O 3 nanostructures. 11 Luminescence at 1.90-2 eV has been reported for Sn-doped In 2 O 3 films 15 and In-doped SnO 2 nanowires 7 and attributed to oxygen deficiency and surface states, respectively.…”

Section: Resultsmentioning

confidence: 99%

Thermal growth and structural and optical characterization of indium tin oxide nanopyramids, nanoislands, and tubes

Maestre

Cremades

Piqueras

et al. 2008

Journal of Applied Physics

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In-doped SnO 2 microtubes as well as Sn-doped In 2 O 3 ͑ITO͒ nano-and microislands have been grown by thermal treatment of compacted SnO 2 -In 2 O 3 powders under argon flow at 1350°C in a catalyst-free process. The SnO 2 tubes contain about 1 at. % of In, even when the In content in the starting mixture was as high as 52 at. %. However, the ITO nanoislands and nanopyramids, grown preferentially on the faces and edges of the tubes, present an In content up to six times higher than the tubes. Spatially resolved cathodoluminescence shows a higher emission from the Sn-rich structures, so that the In-rich ITO nanoislands show dark contrast in the CL images. CL spectra show that the main emission bands in both, Sn-rich and In-rich, structures, are related to oxygen deficiency. X-ray photoelectron spectroscopy shows differences between the tubes and the nanoislands in the O ͑1s͒ spectral region. In particular, a component at 531.9 eV of the O ͑1s͒ signal appears enhanced in the In-rich islands.

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“…The grain sizes were derived from the X-ray diffraction spectra following the Scherrer method [25]. The grain size D is given by:…”

Section: X-ray Diffractionmentioning

confidence: 99%

Effect of oxygen partial pressure on the structural and optical properties of dc sputtered ITO thin films

Kerkache

Layadi

Mosser

2009

Journal of Alloys and Compounds

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Effect of substrate temperature on electrical, structural, optical and cathodoluminescent properties of In2O3-Sn thin films prepared by spray pyrolysis

Cited by 89 publications

References 36 publications

Effect of precursor concentration on the properties of ITO thin films

Effect of precursor concentration on the properties of ITO thin films

Thermal growth and structural and optical characterization of indium tin oxide nanopyramids, nanoislands, and tubes

Effect of oxygen partial pressure on the structural and optical properties of dc sputtered ITO thin films

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