Effect of superheating and fast cooling on Te inclusions of Cd0.9Zn0.1Te:In crystals grown by vertical gradient freezing

Bensalah, H.; Crocco, J.; Carcélen, V.; Black, Andrés; Zheng, Qing; Plaza, J.L.; Diéguez, E.

doi:10.1016/j.jcrysgro.2012.07.012

Cited by 12 publications

(4 citation statements)

References 21 publications

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“…These results suggests that the ingot 2 is better than others, however the other ingots are also convincingly good. The crystalline perfection confirms that the currently grown In-doped CZT single crystal possess better perfection than as well as comparable to earlier reported pure and doped CZT crystals. ,,− ,− …”

Section: Results and Discussionsupporting

confidence: 87%

Large Size Crystal Growth, Photoluminescence, Crystal Excellence, and Hardness Properties of In-Doped Cadmium Zinc Telluride

Shkir

Ganesh

AlFaify

et al. 2018

Crystal Growth & Design

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In the current work, successful growth of an In-doped CdZnTe (InCZT) ingot with a bulk size of ∼8 cm long and 2.5 cm diameter was achieved through gradient freeze process. The whole crystal ingot was cut in six small ingots (1−6), and from these, we have selected pieces 1, 2, 4, and 6, which were again cut into ∼2 mm thickness portions (named 1-1, 1-2, 2-1, 2-2, 4-1, and 6-1) and polished for further characterization. The single phase and direction of growth was verified by X-ray diffraction analysis, which confirmed its growth along (111) plane. The excellence of the grown crystal was analyzed through high-resolution X-ray diffraction (HRXRD), which confirms that the grown crystals is quite perfect and may be used in device fabrications. The Vickers microhardness indentation studies and load dependence studies on different parts of 1-1, 1-2, 2-1, 2-2, 4-1, and 6-1 InCZT crystals are carried at different loads from 0.098 to 0.49 N. Examination of these samples reveals RISE behavior and it is explained by several models of Mayer's law, Hays−Kendall's tactic, and proportional resistance model. Also fracture toughness, brittleness index, yield strength, and elastic stiffness values are measured from indentation studies and found very much correlated with HRXRD analysis.

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Section: Results and Discussionsupporting

confidence: 87%

Large Size Crystal Growth, Photoluminescence, Crystal Excellence, and Hardness Properties of In-Doped Cadmium Zinc Telluride

Shkir

Ganesh

AlFaify

et al. 2018

Crystal Growth & Design

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“…12,13 It has been shown that transmission levels are decreased by Te precipitates/inclusions, and higher transmission levels can be achieved in precipitate-free substrates. [14][15][16] A map of the transmission at k = 500 cm −1 can be seen in Fig. 3b.…”

Section: Beveled Edge -Nippon Substratesmentioning

confidence: 99%

Characterization of (111)B and (211)B CdZnTe Substrates for HgCdTe Growth

Haakenaasen

Lauten

Selvig

et al. 2019

Journal of Elec Materi

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We have studied state-of-the-art CdZnTe (211)B and (111)B substrates and compared them to each other and to substrates from an alternative vendor. The CdZnTe surface has been characterized both as-received and after growth preparation procedures using dark field optical microscopy, scanning electron microscopy, energy-dispersive x-ray spectroscopy, atomic force microscopy, Fourier transform infrared transmission spectroscopy, and secondary ion mass spectroscopy. From these measurements we have obtained densities of particles and morphological defects with size > 0.5 m, densities of small particles/features with size  100 nm, and substrate/film interface impurities. The state-of-the-art substrates all have remains of silica grit polishing particles around the edges. The as-received (111)B substrates had very few particles or morphological defects on the surface, but a Br:methanol surface preparation etch exposed a large number of features with sizes  100 nm. Some of these were silica grit particles, but most of them were Te precipitates. The (111)B substrate from an alternative vendor had a lot of different particles, stains, and voids. It improved significantly after a finepolishing procedure, but still had the surface with most defects after surface preparation. The state-of-the-art (211)B had the largest as-received density of small features, but after Br:methanol etching this density (of Te precipitates and silica grit particles) was the same as for the etched (111)B substrate. SIMS measurements showed that some of the polishing grit particles ended up on the top surface after surface preparation.Hydrofluoric acid can be used to etch away the silica particles.

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“…Today, the growth of CdTe and (Cd, Zn)Te crystals from well-overheated melts becomes a worldwide standard (e.g. [15]). For comparison, also at growth from aqueous solution, high-quality KDP crystals have been only obtained when subcritical clustering was destroyed by large superheating settled over 24 hours before the crystallization was started [16] (Fig.…”

Section: The Influence Of Fluid Phasementioning

confidence: 99%

“…(b) Rapid growth with 16 mm/d of high-quality KDP crystals in highly supersaturated aqueous solution obtained at superheating of 80 K over 24 h before the growth was started (adapted from Ref. [15]). …”

Section: Intrinsic Point Defect Balancementioning

confidence: 99%

Fundamentals and engineering of defects

Rudolph

2016

Progress in Crystal Growth and Characterization of Materials

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Effect of superheating and fast cooling on Te inclusions of Cd0.9Zn0.1Te:In crystals grown by vertical gradient freezing

Cited by 12 publications

References 21 publications

Large Size Crystal Growth, Photoluminescence, Crystal Excellence, and Hardness Properties of In-Doped Cadmium Zinc Telluride

Large Size Crystal Growth, Photoluminescence, Crystal Excellence, and Hardness Properties of In-Doped Cadmium Zinc Telluride

Characterization of (111)B and (211)B CdZnTe Substrates for HgCdTe Growth

Fundamentals and engineering of defects

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