Trans. Electr. Electron. Mater.
 2024
DOI: 10.1007/s42341-024-00543-2
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Effect of Temperature, Doping and Gate Material Engineering on Tri-Gate SOI nFinFET Performance Through TCAD Simulation

Sridhar Panda,
Rajat Subhra Parida,
G Chiranjibi Dora
et al.
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