JESTR
 2021
DOI: 10.25103/jestr.142.03
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Effect of Temperature on Electrical Behavior of 4H-SiC and 6H-SiC Double-Gate (DG) MOSFETs in 130nm Technology

Mourad Hebal1,
Menaouer Bennaoum2,
Hocine Abdelhak Azzeddine3
et al.
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