Effect of the gap size on the SSI efficiency of split-gate memory cells

Palestri, Pierpaolo; Akil, N.; Stefanutti, W.; Slotboom, M.; Selmi, L.

doi:10.1109/ted.2005.864382

Cited by 13 publications

(7 citation statements)

References 13 publications

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“…The understanding of the physical mechanisms beside the SSI operation in split-gate memories is crucial for the interpretation of different aspects of the experimental results [7][8][9][10][11]. In this section we use simulations to understand the impact of the memory and select gate scaling on the measured programming efficiency and current consumption.…”

Section: Resultsmentioning

confidence: 99%

Physical Understanding of Program Injection and Consumption in Ultra-Scaled SiN Split-Gate Memories

Masoero

Molas

Marca

et al. 2012

2012 4th IEEE International Memory Workshop

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In this work, a detailed study of the physical mechanisms governing the Source Side Injection programming in ultra-scaled (down to 20nm) SiN split-gate memories is presented. Experimental measurements coupled to static and dynamic TCAD simulations are shown. In particular, we claim that adjusting the select gate voltage in moderate inversion allows for the optimization of the compromise between high electron injection and limited consumption. Then, we show that scaling the dimensions of the select gate can induce a higher consumption, while scaling the memory gate leads to lower programming energy (<1nJ) due to higher injection efficiency, suitable for low power applications.

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Section: Resultsmentioning

confidence: 99%

Physical Understanding of Program Injection and Consumption in Ultra-Scaled SiN Split-Gate Memories

Masoero

Molas

Marca

et al. 2012

2012 4th IEEE International Memory Workshop

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“…To be considered as a reference in the modelling comparison, the Monte Carlo simulator used in this work [4] to benchmark the TCAD models fulfils the requirements highlighted in [9], i.e. it accounts for the full-band structure of silicon, for full band phonon scatterings, scatterings with ionized impurities and impact ionization scatterings.…”

Section: Models' Descriptionmentioning

confidence: 99%

“…it accounts for the full-band structure of silicon, for full band phonon scatterings, scatterings with ionized impurities and impact ionization scatterings. Such a setup has also been used in previous works for electron and hole injection on different cell architectures [4,17] and successfully compared to experimental data for carrier injection. Moreover, the electron-electron interaction and scatterings in the tunnel oxide have been neglected in this work since we consider drain to source voltage large enough to provide the high energy electron tail and we consider floating gate voltages at which scattering in the oxide is expected to weakly influence the results [11].…”

Section: Models' Descriptionmentioning

confidence: 99%

“…In conclusion, models based on local assumption of carrier transport can not reproduce inhomogeneous distribution function, even when the effective field correction is applied. [4] and the analytical expression from the steady-state hydrodynamic model available in TCAD [16]. The latter is also used to calculate the mean energy in TCAD.…”

Section: Distribution Functionsmentioning

confidence: 99%

“…In this context, the aim of this paper is therefore to benchmark these different TCAD models (LEM, FM and SHE) and to assess their ability to accurately model hot electron injection in advanced [4] simulation will be used as reference. In Section 2, the different modelling approaches will be briefly reviewed.…”

Section: Introductionmentioning

confidence: 99%

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On the accuracy of current TCAD hot carrier injection models in nanoscale devices

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The paradigm shift from a field- to an energy-based framework in the\ud modeling of hot-carrier-induced degradation has triggered a detailed microscopic view on the degradation mechanisms in MOSFET devices (see also chapter “The Spherical Harmonics Expansion Method for Assessing Hot Carrier Degradation”).\ud The knowledge of the carrier energy distribution inside the device is the main ingredient enabling the energy-dependent approaches. However, efficient and reliable hot-carrier modeling in electron devices is a challenging task. This chapter presents a novel semi-analytical approach to model hot-carrier transport in MOSFET devices. The new approach is inherently non-local and: (a) considers full-band aspects of the silicon band structure, (b) includes major inelastic scattering mechanisms such as optical phonons, impact ionization and carrier-carrier scattering. The model is extensively compared against reference full-band Monte Carlo simulations in terms of distribution functions as well as bulk and gate currents over a wide range of gate lengths and bias conditions. The obtained good agreement confirms the accuracy of the adopted approach that offers an efficient alternative to Monte Carlo and Spherical Harmonics Expansion for hot-carrier modeling

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Effect of the gap size on the SSI efficiency of split-gate memory cells

Cited by 13 publications

References 13 publications

Physical Understanding of Program Injection and Consumption in Ultra-Scaled SiN Split-Gate Memories

Physical Understanding of Program Injection and Consumption in Ultra-Scaled SiN Split-Gate Memories

On the accuracy of current TCAD hot carrier injection models in nanoscale devices

Semi-analytic Modeling for Hot Carriers in Electron Devices

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