Effect of the Hf content on the microstructure and ferroelectric properties of Hf_xZr_1−xO₂ thin films using an all-inorganic aqueous precursor solution

Abstract

Ferroelectric HfxZr1-xO2 (0 ≤ x ≤ 0.50) thin films, synthesized on the surface of Si (100) substrates using all-inorganic salt precursor by chemical solution deposition (CSD), have been proved in...