Effective<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mi>g</mml:mi></mml:math>Factor of Electrons and Holes in Bismuth

Smith, George E.; Baraff, G. A.; Rowell, J. M.

doi:10.1103/physrev.135.a1118

Cited by 365 publications

(160 citation statements)

References 7 publications

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“…The observed periods in all three geometries are in good agreement with those obtained in bulk Bi single crystals. 27 The S-dH oscillation results further attest to the high quality of the single-crystal Bi films.…”

Section: S-dh Oscillationsmentioning

confidence: 82%

Very large magnetoresistance in electrodeposited single-crystal Bi thin films (invited)

Chien

Yang

et al. 2000

Journal of Applied Physics

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Section: S-dh Oscillationsmentioning

confidence: 82%

Very large magnetoresistance in electrodeposited single-crystal Bi thin films (invited)

Chien

Yang

et al. 2000

Journal of Applied Physics

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“…The Gaussian curvature for the binary plane is the same as that for the bisectrix plane. The values of α 1 ∼ α 4 have been experimentally determined, 71,137) which are listed in Table IV. Using these values, we can evaluate the total Gaussian curvature as follows: 71) (in the unit of the bare electron mass m) and the inverse mass tensorα (in the unit of m −1 ).…”

Section: Evaluation For Bismuthmentioning

confidence: 99%

“…71,137) The magnitude of χ (e) ⊥ is of the order of 10 −5 emu. If we choose E c /∆ = 100, we have χ ⊥ = −1.89 × 10 −5 emu.…”

Section: Evaluation For Bismuthmentioning

confidence: 99%

Transport Properties and Diamagnetism of Dirac Electrons in Bismuth

2015

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Bismuth crystal is known for its remarkable properties resulting from particular electronic states, e. g., the Shubnikovde Haas effect and the de Haas-van Alphen effect. Above all, the large diamagnetism of bismuth had been a long-standing puzzle soon after the establishment of quantum mechanics, which had been resolved eventually in 1970 based on the effective Hamiltonian derived by Wolff as due to the interband effects of a magnetic field in the presence of a large spin-orbit interaction. This Hamiltonian is essentially the same as the Dirac Hamiltonian, but with spatial anisotropy and an effective velocity much smaller than the light velocity. This paper reviews recent progress in the theoretical understanding of transport and optical properties, such as the weak-field Hall effect together with the spin Hall effect, and ac conductivity, of a system described by the Wolff Hamiltonian and its isotropic version with a special interest of exploring possible relationship with orbital magnetism. It is shown that there exist a fundamental relationship between spin Hall conductivity and orbital susceptibility in the insulating state on one hand, and the possibility of fully spinpolarized electric current in magneto-optics. Experimental tests of these interesting features have been proposed.

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“…The calculation predicts the SMSC transition to occur at 20 kbar, which is completely missed by the experimental data. Note that there is a reasonable amount of uncertainty in the pressure dependence of the band parameters [21][22][23] and so the calculation should not be taken too literally, but in any case the experimental ! p does not appear to extrapolate to zero at the known p c near 25 kbar.…”

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confidence: 99%

Infrared Conductivity of Elemental Bismuth under Pressure: Evidence for an Avoided Lifshitz-Type Semimetal-Semiconductor Transition

et al. 2010

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The application of pressure to elemental bismuth reduces its conduction-valence band overlap, and results in a semimetal-semiconductor (SMSC) transition around 25 kbar. This transition is nominally of the topological ''Lifshitz'' Fermi surface variety, but there are open questions about the role of interactions at low charge densities. Using a novel pressure cell with optical access, we have performed an extensive study of bismuth's infrared conductivity under pressure. In contrast to the expected pure band behavior we find signatures of enhanced interaction effects, including strongly coupled charge-plasmon (plasmaron) features and a plasma frequency that remains finite up to the transition. These effect are inconsistent with a pure Lifshitz bandlike transition. We postulate that interactions play a central role in driving the transition.

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EffectivegFactor of Electrons and Holes in Bismuth

Cited by 365 publications

References 7 publications

Very large magnetoresistance in electrodeposited single-crystal Bi thin films (invited)

Very large magnetoresistance in electrodeposited single-crystal Bi thin films (invited)

Transport Properties and Diamagnetism of Dirac Electrons in Bismuth

Infrared Conductivity of Elemental Bismuth under Pressure: Evidence for an Avoided Lifshitz-Type Semimetal-Semiconductor Transition

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