Effective temperature for electrons in band tails

Baranovskiǐ, S. D.; Cleve, B.; Hess, R. V.; Thomas, P.

doi:10.1016/0022-3093(93)90583-j

Cited by 36 publications

(43 citation statements)

References 14 publications

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“…In the 3D AH model, a low-field value of the parameter C ¼ 1/2 1/2 ¼ 0.707 is obtained, in very close agreement with C ¼ 0.67 AE 0.03 (Marianer and Shklovskii 1992) or C ¼ 0.69 AE 0.03 (Baranovskii et al 1993) derived empirically for field-enhanced hopping in exponential band tails. However, in contrast with the results of Monte Carlo simulations of band-tail hopping, C(b) cannot be regarded as field independent, as shown by the expression…”

Section: Godetsupporting

confidence: 78%

“…In good agreement with the work of Marianer and Shklovskii (1992), Baranovskii et al (1993) have also obtained a Boltzmann occupation function from Monte Carlo simulations, with an effective temperature described by equation (1) and C ¼ 0.69 AE 0.03. Using a similar Monte Carlo simulation, Cleve et al (1995) have computed the transient hopping current which was found to obey the time dependence I(t) t À1þ expected for dispersive transport.…”

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confidence: 61%

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Analytical derivation of the effective temperature for field-dependent hopping conductivity

Godet

2003

Philosophical Magazine Letters

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The electric-field enhancement of hopping conductivity in amorphous solids can be described in terms of an effective temperature T eff given by T 2 eff % T 2 þ ½CðFÞ À1 eF=k 2 for hopping, at a temperature T and field F, within a uniform distribution of electronic states with localization length À1 . We have derived this expression analytically and find at low fields a value for C of 1/2 1/2 , which is consistent with the F-independent value C ¼ 0.67 previously obtained numerically for band-tail hopping. With increasing electric field, the decrease in C(F) matches the hopping transport characteristics in amorphous semiconductors (hydrogenated amorphous silicon and hydrogenated amorphous carbon nitride) better than previous numerical simulations.

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Section: Godetsupporting

confidence: 78%

supporting

confidence: 61%

Analytical derivation of the effective temperature for field-dependent hopping conductivity

Godet

2003

Philosophical Magazine Letters

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“…(65). It has been checked numerically for systems with exponential DOS that this effective activation induced by the electric field produces a Boltzmann tail described by

T_{eff} false(F false)

in the energy distribution of carriers .…”

Section: Dependence Of Transport Coefficients On Electric Field Fmentioning

confidence: 99%

“…We show below that theoretical concepts well known for at least 40 years, which have successfully been applied to describe hopping transport in inorganic disordered materials, are well suitable to describe hopping transport in ODSs with the Gaussian DOS. Among such approaches one should highlight the percolation theory [22,44,63,64,[71][72][73], the concept of the transport energy (TE) [22,44,63,64,[74][75][76][77][78], and the concept of the effective temperature [79][80][81][82][83]. This theoretical development stayed out of the scope of researchers working with ODSs for a long time.…”

Section: Review Articlementioning

confidence: 99%

Theoretical description of charge transport in disordered organic semiconductors

Baranovskiǐ

2014

Physica Status Solidi (b)

303

365

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Twenty years ago Heinz Bässler published in this journal the seminal review article on charge transport in disordered organic semiconductors [Phys. Status Solidi B 175, 15 (1993)], which has become one of the most popular references in this research field. Thanks to this paper, our understanding of charge transport in disordered organic materials has been essentially improved in the past two decades. New theoretical methods have been developed and new results on various phenomena related to charge transport in disordered organic materials have been obtained. The aim of the current review is to present these new theoretical methods and to highlight the most essential results obtained in their framework. While theoretical consideration in the article by Bässler was based on computer simulations, particular attention in the current review is given to the development of analytical theories. Dependences of charge carrier mobility and diffusivity on temperature, electric field, carrier concentration and on material and sample parameters are discussed in detail. Schematic behaviour of charge carriers within the Gaussian density of states (DOS)

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“…8 Although this result was obtained for an exponential DOS it does not depend upon the DOS characteristics such as the DOS width and the density of localized states suggesting a universal validity of T eff . 8 Although this result was obtained for an exponential DOS it does not depend upon the DOS characteristics such as the DOS width and the density of localized states suggesting a universal validity of T eff .…”

Section: Introductionmentioning

confidence: 90%

Field-dependent effective temperature and variable range hopping: Application to dark dc conductivity in doped a-Si:H

Архипов

Emelianova

Adriaenssens

2003

Journal of Applied Physics

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Field and temperature dependencies of the dark dc hopping conductivity are calculated for an algebraic energy distribution of localized states near the Fermi level. These dependencies are shown to merge in a universal dependence on a field-dependent effective temperature T eff . An analytical expression for T eff is derived. The analytic results agree quantitatively with experimental data obtained by Nebel et al. ͓Phys. Rev. B 46, 6803 ͑1992͔͒ for boron-and phosphorous-doped a-Si:H. Although the effective temperature does depend upon a particular choice of the density-of-states ͑DOS͒ distribution this dependence is not very strong for DOS functions that are not too steep near the Fermi level.

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Effective temperature for electrons in band tails

Cited by 36 publications

References 14 publications

Analytical derivation of the effective temperature for field-dependent hopping conductivity

Analytical derivation of the effective temperature for field-dependent hopping conductivity

Theoretical description of charge transport in disordered organic semiconductors

Field-dependent effective temperature and variable range hopping: Application to dark dc conductivity in doped a-Si:H

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