Effects of channel doping concentration and fin dimension variation on self-boosting of channel potential in NAND-type SONOS flash memory array based on bulk-FinFETs

Cho, Seongjae; Choi, Jaehyuk; Park, Byung‐Gook; Cho, Il Hwan

doi:10.1016/j.cap.2010.01.004

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Effects of channel doping concentration and fin dimension variation on self-boosting of channel potential in NAND-type SONOS flash memory array based on bulk-FinFETs

Cited by 5 publications

References 11 publications

Analytical model of surface potential and threshold voltage in gate-drain overlap FinFET

Analytical model of surface potential and threshold voltage in gate-drain overlap FinFET

Characterization of dual floating gate memory devices constructed on glass

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