Journal of the Korean Physical Society
 2017
DOI: 10.3938/jkps.71.963
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Effects of floating gate structures on the two-dimensional electron gas density and electron mobility in AlGaN/AlN/GaN heterostructure field-effect transistors

Jun Zhao1,
Zhiwei Zhao
2
,
Zidong Chen3
et al.
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Cited by 2 publications
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