Effects of geometry and doping level on dispersion and spectrum in GaAs/AlGaAs quantum well waveguide for the near-IR region

Abstract

In this work, we study numerically the optical nonlinear pulse propagation in a multiple quantum well waveguide made of Al x Ga 1Àx As. We show that this type of structure can have great potential as a supercontinuum (SC) source which could be integrated to a photonic circuit, due to its small size. We show that manipulating the geometry and the Al mole fraction x of the structure, the dispersion and nonlinear coe±cient parameters can be controlled.

Optical absorption via intersubband transition of electrons in GaAs/AlxGa1−xAs multi-quantum wells in an electric field

“…Furthermore, they pointed out that the critical number (the transition point from a red shift to a blue one) for RICs is 6 [8] . Early on, Kong et al revealed that there is a certain considerable variation of the RICs when there is one more or less than 16 mono-layers in an asymmetric coupled QWs under a −50 kV/cm electric field without doping [9] . However, Herrera et al recently confirmed that manipulating the Al composition changes the nonlinear phenomena in MQWs, which is composed of 40 layers in experiments by fixing the width to 1.2 µm without the consideration of the size effect [10] .…”