Effects of group V precursor and step structure on ordering in GaInP

Lee, S. H.; Hsu, Yu-Pin; Stringfellow, G. B.

doi:10.1007/s11664-997-0027-6

Cited by 11 publications

(5 citation statements)

References 24 publications

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“…It is important to note that the SPA signal due to 110 [ ] P dimers appears to be the same for PH 3 and TBP at 670°C. 24 In addition, the observed delay for PH 3 at 670°C appears to be similar for initial partial pressures of 1.5 and 6.0 Torr, as seen in Fig. 5.…”

Section: Discussionsupporting

confidence: 63%

“…25 However, we now know that the step structure is not a causative factor in the CuPt ordering mechanism. 24 The slow change in step structure is more likely an indicator of the P coverage of the surface, since it is well established that the steps change from predominately monolayer, at low values of P P , to mainly bilayers at high values of P P . 11 Clearly, the difference in SPA transients observed for TBP and PH 3 cannot be related to a difference in P 2 pressure in equilibrium with GaInP.…”

Section: Discussionmentioning

confidence: 99%

“…During growth of a heterostructure, the sluggish change in order parameter would not seem to be directly caused by the H, since the same order parameters are observed for growth using PH 3 and TBP at 670°C. 24 However, the change in P 2 desorption attributed to the presence of H might cause both the sluggish change in the order parameter and the slow change in the step structure. The H would have to behave as a surfactant, i.e., it would "float" on the surface 28 for many minutes after the reduction of the PH 3 partial pressure or, for the case described above, for the change to TBP at a reduced V/III ratio of 5.…”

Section: Discussionmentioning

confidence: 99%

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Growth of order/disorder heterostructures in GaInP using a variation in V/III ratio

Ying

Hsu

et al. 1997

Journal of Elec Materi

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CuPt ordering, resulting in formation of a natural monolayer {111} superlattice, occurs spontaneously during organometallic vapor phase epitaxial growth of Ga 0.52 In 0.48 P. The degree of order is found to be a function of the input partial pressure of the phosphorus precursor (P P ) during growth. This is thought to be mainly due to the effect of P P on the surface reconstruction. A change in order parameter is associated with a change in the bandgap energy. Thus, a practical application of ordering is the production of a heterostructure by simply changing the flow rate of the P precursor during growth. Examination of transmission electron microscopy data and photoluminescence spectra indicates that order/ disorder (O/D) (really less ordered on more ordered) and D/O heterostructures formed by growth using PH 3 at a temperature of 620°C are graded over several thousands of Å: The ordered structure from the lower layer persists into the upper layer. Similar results were obtained at 620°C when the first layer was grown using PH 3 (V/III = 160) and the second using tertiarybutylphosphine (TBP) (V/III = 5). The use of a temperature of 670°C to produce heterostructures using either PH 3 or TBP yields a totally different behavior. Abrupt D/O and O/D heterostructures can be produced by changing P P during the growth cycle. The cause of this difference in behavior is not entirely clear. However, it appears to be related to a very slow change in the surface reconstruction, measured using surface photo absorption, when the PH 3 partial pressure is changed at 620°C.

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Section: Discussionsupporting

confidence: 63%

Section: Discussionmentioning

confidence: 99%

Section: Discussionmentioning

confidence: 99%

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Growth of order/disorder heterostructures in GaInP using a variation in V/III ratio

Ying

Hsu

et al. 1997

Journal of Elec Materi

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“…25 The effect of decreasing the TBP partial pressure has been reported to be a decrease in step velocity ͑or step spacing͒ for the monolayer steps produced. 26 The step spacing from this study is plotted versus the percentage of bilayer steps in Fig. 4.…”

Section: Discussionmentioning

confidence: 99%

“…Lee et al 26 found that the change from TBP to PH 3 as the P precursor resulted in a significant increase in the number of monolayer steps. However, this change from bilayer to monolayer steps had no effect on the step spacing ͑step velocity͒.…”

Section: Discussionmentioning

confidence: 99%

Te doping of GaInP: Ordering and step structure

Lee

Fetzer

Stringfellow

et al. 1999

Journal of Applied Physics

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The donor Te has been added to GaInP during organometallic vapor phase epitaxial growth using the precursor diethyltelluride. In agreement with previous studies, the addition of high Te concentrations leads to the elimination of the CuPt ordering observed in undoped layers. The degree of order is estimated from the low temperature photoluminescence peak energy to decrease from 0.5 at Te concentrations of Ͻ2ϫ10 17 cm Ϫ3 to 0 for Te concentrations of Ͼ6ϫ10 17 cm Ϫ3 . This is verified by transmission electron diffraction studies, which show the elimination of the 1/2͕111͖ superlattice spots at high Te doping levels. A remarkable change in the surface structure is found to accompany this decrease in ordering: The surfaces become much smoother.Step bunching is observed to disappear for the vicinal GaAs substrates, misoriented from ͑001͒ by 3°in the B direction, and three-dimensional island ͑or mound͒ formation is eliminated for the singular ͑001͒ substrates. A qualitative model is presented explaining this behavior based on the effect of Te on the step structure and the bonding at step edges, both of which affect the adatom sticking at steps.

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Physical Processes Occurring on the Surface

Stringfellow

1999

Organometallic Vapor-Phase Epitaxy

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Effects of group V precursor and step structure on ordering in GaInP

Cited by 11 publications

References 24 publications

Growth of order/disorder heterostructures in GaInP using a variation in V/III ratio

Growth of order/disorder heterostructures in GaInP using a variation in V/III ratio

Te doping of GaInP: Ordering and step structure

Physical Processes Occurring on the Surface

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