Effects of implementing dual-step nitrogen ambient for growth and post-deposition annealing of Ga2O3 films sputtered on silicon

Mohammed, Alghareeb Abbas Abdulhussein; Lim, Way Foong

doi:10.1007/s10854-024-13488-2

J Mater Sci: Mater Electron

2024

DOI: 10.1007/s10854-024-13488-2

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Effects of implementing dual-step nitrogen ambient for growth and post-deposition annealing of Ga2O3 films sputtered on silicon

Alghareeb Abbas Abdulhussein Mohammed,

Way Foong Lim

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Photoresponse characteristics of bulk gallium nitride schottky barrier metal-semiconductor-metal ultraviolet photodetectors

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Photoresponse characteristics of bulk gallium nitride schottky barrier metal-semiconductor-metal ultraviolet photodetectors

Abutawahina,

Abdulhussein Mohammed,

Hamzah

et al. 2024

Sensors and Actuators A: Physical

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Effects of implementing dual-step nitrogen ambient for growth and post-deposition annealing of Ga2O3 films sputtered on silicon

Cited by 1 publication

References 62 publications

Photoresponse characteristics of bulk gallium nitride schottky barrier metal-semiconductor-metal ultraviolet photodetectors

Photoresponse characteristics of bulk gallium nitride schottky barrier metal-semiconductor-metal ultraviolet photodetectors

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