Effects of Interface Nitride Layer on Electrical Characteristics of SiO₂/Nitride/SiC Metal–Insulator–Semiconductor Diode

Abstract

Transport analysis during the transient phase of heating (a dynamic transport study) applied to the plasma with internal transport barriers (ITBs) in the Large Helical Device (LHD) heliotron and the JT-60U tokamak is described. In the dynamic transport study the time of transition from the L-mode plasma to the ITB plasma is clearly determined by the onset of flattening of the temperature profile in the core region and a spontaneous phase transition from a zero curvature ITB (hyperbolic tangent shaped ITB) or a positive curvature ITB (concaved shaped ITB) to a negative curvature ITB (convex shaped ITB) and its back-transition are observed. The flattening of the core region of the ITB transition and the back-transition between a zero curvature ITB and a convex ITB suggest the strong interaction of turbulent transport in space.

Plasma Nitridation of 4H-SiC by Glow Discharge of N₂/H₂ Mixed Gases

“…This indicated that the thickness of the nitridation layer was very small. The thickness of the surface layer can be estimated from XPS data [3]. Figure 3(b) shows the time dependence of the nitride thickness estimated from Si2p spectrum, together with the data of the samples prepared by the thermal nitridation in N 2 and NH 3 mixed gases reported by Sakai et.…”

“…This indicated that the thickness of the nitridation layer was very small. The thickness of the surface layer can be estimated from XPS data [3].…”

Preparation and Characterization of Deposited Tetraethylorthosilicate-SiO₂/SiC MIS Structure

“…The interface state density between the thin insulating layer and SiC was estimated from the current -voltage characteristics of MIS Schottky contact before and after the annealing [3,5], and are listed on Table I. The interface state density decreased after the annealing in the deposition chamber.…”

“…We have tried to use nitride layer as the insulating layer of SiC MIS devices [2,3,4]. It has been difficult to get the nitride layer thicker than several nm by direct nitridation method.…”

SiC Nitridation by NH3 Annealing and Its Effects in MOS Capacitors with Deposited SiO2 Films

“…20,21,28 The origin of oxygen could be due to contamination in the furnace used for thermal nitridation or to oxygen incorporation from air exposure. Contamination in the furnace was minimized by pumping the system down to 10 À7 mbar prior to the introduction of 15 NH 3 gas, although the presence of oxygen during annealing cannot be ruled out, since the same furnace was previously used for thermal oxidations, and outdiffusion of O from its walls could occur during ammonia annealing.…”