Effects of intermediate metal layer on the properties of Ga–Al doped ZnO/metal/Ga–Al doped ZnO multilayers deposited on polymer substrate

Jung, Yu Sup; Kim, Kyung Hwan

doi:10.1016/j.materresbull.2012.04.104

Cited by 11 publications

(3 citation statements)

References 16 publications

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“…Therefore, substrate damage from high-energy particles, such as electrons and ions, is suppressed in the case of using the FTS method. [21][22][23] Glass substrates were cleaned in an ultrasonic cleaner using acetone, ethanol, and deionized water for 10 min, and dried with nitrogen gas. The Cu targets were presputtered in an argon atmosphere for 30 min to remove surface oxidation.…”

Section: Experimental Methodsmentioning

confidence: 99%

Properties of p-type N-doped Cu₂O thin films prepared by reactive sputtering

Jung

Choi

Kim

2014

Jpn. J. Appl. Phys.

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We have investigated the electrical, optical, and structural properties of p-type nitrogen (N)-doped Cu 2 O thin films prepared at various nitrogen gas flow rates for application in heterojunction solar cells. The N-doped Cu 2 O thin films were fabricated by facing-target reactive sputtering. The hole concentration of the N-doped Cu 2 O thin films was affected by N 2 gas flow rate. With increasing N 2 gas flow rate from 0 to 0.5 sccm, the hole concentration and mobility of N-doped Cu 2 O films increased sharply. The resistivity, hole concentration, and mobility of the N-doped Cu 2 O films prepared at a N 2 gas flow rate of 4 sccm were 1.9 Ω&cm, 2.0 ' 10 18 cm %3 , and 3.4 cm 2 &V %1 &s %1 , respectively. The N-doped Cu 2 O films showed Cu 2 O(111) and Cu 2 O(200) diffraction peaks. Cu 2 O(200) diffraction peak intensity increased slightly with N 2 gas flow rate. The Cu 2 O(200) peaks were stronger at a N 2 gas flow rate of 4 sccm than at other gas flow rates.

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Section: Experimental Methodsmentioning

confidence: 99%

Properties of p-type N-doped Cu₂O thin films prepared by reactive sputtering

Jung

Choi

Kim

2014

Jpn. J. Appl. Phys.

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“…Consequently, the FTS system can suppress substrate damage due to high-energy particles, such as electrons and partial ions. [15][16][17][18][19] The vacuum chamber is evacuated to 2:6 Â 10 À4 Pa by a turbomolecular pump. The WO 3Àx thin films are deposited on indium tin oxide (ITO) glass substrates in reactive atmosphere with different oxygenargon mixture ratios.…”

Section: Deposition Of Wo 3àx Filmsmentioning

confidence: 99%

Electrochromic Properties of Tungsten Oxide Films Prepared by Reactive Sputtering

Kim

Kang

Jung

et al. 2013

Jpn. J. Appl. Phys.

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WO3-x thin films were deposited on induim tin oxide (ITO) glass substrates with various oxygen flow ratios from 0.55 to 0.7 by the reactive facing-target sputtering method, at a power density of 4 W/cm2 and room temperature. The structural properties of the WO3-x thin films were measured by X-ray diffractometry and Raman spectral analysis. As-deposited WO3-x thin films had an amorphous structure. In the Raman spectra, WO3-x thin films exhibited two strong peaks at 770 and 950 cm-1 attributed to the vibrations of W6+–O and W6+=O bonds, respectively. The electrochemical and optical properties of WO3-x thin films were measured by cyclic voltammetry and UV/vis spectrometry. The results showed the highest charge density at an oxygen flow ratio of 0.7 and the highest transmittance in the visible range. The maximum coloration efficiency was 30.82 cm2/C at an oxygen flow ratio of 0.7.

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“…However, glass is heavy and brittle, and is thus unsuitable for emerging flexible electronic devices, such as smart cards, electronic maps, flat panel displays, and so on [ 1 , 2 ]. Consequently, the feasibility of utilizing polymer materials as a substrate material has attracted increasing interest in recent years [ 3 , 4 ]. Among the various conducting thin film materials available, ZnO, doped with elements such as Al [ 5 ], Ga [ 6 ], In [ 7 ], and Mo [ 8 ], has received particular attention due to its excellent optical and electrical properties.…”

Section: Introductionmentioning

confidence: 99%

Effects of Annealing Temperature on Properties of Ti-Ga–Doped ZnO Films Deposited on Flexible Substrates

Chen

2015

Nanomaterials

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An investigation is performed into the optical, electrical, and microstructural properties of Ti-Ga–doped ZnO films deposited on polyimide (PI) flexible substrates and then annealed at temperatures of 300 °C, 400 °C, and 450 °C, respectively. The X-ray diffraction (XRD) analysis results show that all of the films have a strong (002) Ga doped ZnO (GZO) preferential orientation. As the annealing temperature is increased to 400 °C, the optical transmittance increases and the electrical resistivity decreases. However, as the temperature is further increased to 450 °C, the transmittance reduces and the resistivity increases due to a carbonization of the PI substrate. Finally, the crystallinity of the ZnO film improves with an increasing annealing temperature only up to 400 °C and is accompanied by a smaller crystallite size and a lower surface roughness.

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Effects of intermediate metal layer on the properties of Ga–Al doped ZnO/metal/Ga–Al doped ZnO multilayers deposited on polymer substrate

Cited by 11 publications

References 16 publications

Properties of p-type N-doped Cu₂O thin films prepared by reactive sputtering

Properties of p-type N-doped Cu₂O thin films prepared by reactive sputtering

Electrochromic Properties of Tungsten Oxide Films Prepared by Reactive Sputtering

Effects of Annealing Temperature on Properties of Ti-Ga–Doped ZnO Films Deposited on Flexible Substrates

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Effects of intermediate metal layer on the properties of Ga–Al doped ZnO/metal/Ga–Al doped ZnO multilayers deposited on polymer substrate

Cited by 11 publications

References 16 publications

Properties of p-type N-doped Cu2O thin films prepared by reactive sputtering

Properties of p-type N-doped Cu2O thin films prepared by reactive sputtering

Electrochromic Properties of Tungsten Oxide Films Prepared by Reactive Sputtering

Effects of Annealing Temperature on Properties of Ti-Ga–Doped ZnO Films Deposited on Flexible Substrates

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Product

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Properties of p-type N-doped Cu₂O thin films prepared by reactive sputtering

Properties of p-type N-doped Cu₂O thin films prepared by reactive sputtering