Effects of metal work function and gate-oxide dielectric on super high frequency performance of a non-align junction DG-MOSFET based inverter in the
            <i>sub</i>
            -100 nm regime: a TCAD simulation analysis

Naik, Banoth Vasu; Sinha, Arun Kumar

doi:10.1080/00207217.2023.2278435

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Effects of metal work function and gate-oxide dielectric on super high frequency performance of a non-align junction DG-MOSFET based inverter in the sub -100 nm regime: a TCAD simulation analysis

Cited by 4 publications

References 20 publications

Compact design of universal gates with non-aligned gate technology and assessment of its performance in a TCAD Environment

Compact design of universal gates with non-aligned gate technology and assessment of its performance in a TCAD Environment

Design and test of a sub -45 nm non-aligned double gate inverter in TCAD environment: static and dynamic analysis

A TCAD Simulation Analysis of NADGFET Oscillator with Metal and Dielectric Combination

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