2013
DOI: 10.1016/j.apsusc.2012.10.082
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Effects of pulse bias on structure and properties of silicon/nitrogen-incorporated diamond-like carbon films prepared by plasma-enhanced chemical vapor deposition

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Cited by 23 publications
(16 citation statements)
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“…It is associated with the stretching vibration of sp 2 -C in carbon chains and aromatic rings (D peak) and the symmetric breathing vibration of sp 2 -C only in rings (G peak). , Normally, the G peak position, I D / I G , and FWHM G are crucial information for the sp 2 -C bonding structure. , The G peak positions of the Si-DLC and SiN-DLC films are 1509 and 1515 cm –1 , respectively, indicating that the SiN-DLC film shows a lower internal stress level than that of Si-DLC. The N dopant promotes the formation of sp 2 -C rings, , thus resulting in a higher internal stress level for the SiN-DLC film. There was no significant difference between the I D / I G of Si-DLC (0.43) and SiN-DLC (0.42).…”
Section: Resultsmentioning
confidence: 99%
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“…It is associated with the stretching vibration of sp 2 -C in carbon chains and aromatic rings (D peak) and the symmetric breathing vibration of sp 2 -C only in rings (G peak). , Normally, the G peak position, I D / I G , and FWHM G are crucial information for the sp 2 -C bonding structure. , The G peak positions of the Si-DLC and SiN-DLC films are 1509 and 1515 cm –1 , respectively, indicating that the SiN-DLC film shows a lower internal stress level than that of Si-DLC. The N dopant promotes the formation of sp 2 -C rings, , thus resulting in a higher internal stress level for the SiN-DLC film. There was no significant difference between the I D / I G of Si-DLC (0.43) and SiN-DLC (0.42).…”
Section: Resultsmentioning
confidence: 99%
“…55,56 The G peak positions of the Si-DLC and SiN-DLC films are 1509 and 1515 cm −1 , respectively, indicating that the SiN-DLC film shows a lower internal stress level than that of Si-DLC. The N dopant promotes the formation of sp 2 -C rings, 57,58 thus resulting in a higher internal stress level for the SiN-DLC film. There was no significant difference between the I D /I G of Si-DLC (0.43) and SiN-DLC (0.42).…”
Section: Methodsmentioning
confidence: 99%
“…In figure 6, the spectra for the same generator powers but a higher flow rate are presented. With increasing Si content, a shift of the G peak to lower wavenumbers as well as a decrease of the D peak, disappearing at approximately 20 at.% Si, was observed by other authors [5,53,49,95]. The disruption of the six-fold aromatic rings by silicon incorporation is the reason for this effect [94].…”
Section: Figurementioning
confidence: 52%
“…Further film modification and improvement can be achieved by the simultaneous incorporation of several elements such as Si-N-DLC [53][54][55] and Si-O-DLC [5,23,45,55], preparation of multilayer coatings [45,56,57] or surface texturing [58].…”
Section: Introductionmentioning
confidence: 99%
“…Thin films of C:Si were synthesized to cover solid structures and deposited by plasma enhanced chemical vapor deposition (PECVD) [9][10][11][12], radiofrequency PECVD (RF-PECVD) [13][14][15], magnetron sputtering (MS) [16,17], hybrid magnetron sputtering/chemical vapor deposition (MS/CVD) [18], and pulsed laser deposition (PLD) [19,20]. Selected permanent Si concentrations of 0 to 21.54 at.% by PECVD [10][11][12], 0 to 17 at.% by RF-PECVD [14,15], 23 and 37.6 at.% by MS [16,17], and 2.8 to 18.6 at.% by PLD [20] were obtained.…”
Section: Introductionmentioning
confidence: 99%