Effects of Sn-doping on JC–B properties and crystalline structure for YBCO films by advanced TFA-MOD method

Miniaturization of BaHfO3nanoparticles in YBa2Cu3Oy-coated conductors using a two-step heating process in the TFA-MOD method

“…In thecase of pulsed laser deposition (PLD), control of the size, shape, density, or configuration of pinning centers has been studied [9,10]. In the MOD method, various compounds containing Zr, Sn, or Hf are added into starting solutions to introduce pinning centers in the film during film crystallization in both the TFA-MOD method [11][12][13][14][15] and the fluorine-free MOD method [16,17]. However,as the size control of pinning centers in the MOD method is later than that in the PLD technique, the discussion is not yet well progressedregarding the MOD method.…”

Structural and Superconducting Properties of Thermal Treatment-Synthesised Bulk YBa2Cu3O7−δ Superconductor: Effect of Addition of SnO2 Nanoparticles

“…These peaks were controversially indexed. While some groups assigned these peaks to BaSnO 2 [19,22], Choi et al indicate that these peaks belong to Y-Ba-Sn-O [18]. However, it can be concluded that Sn was not incorporated into the Y-123 crystal, and instead participated in the form of Sn-based secondary phases.…”

“…Sn and SnO 2 are frequently introduced into Y-123 thin films fabricated by metal organic deposition process. These materials form Sn-based nanomaterials in the Y-123 matrix that can act as effective pinning centres [17,18,19]. Uniform distributed Sn-based reacted phase was also observed when SnO 2 was added into melt texture grown bulk Y-123 [20].…”

Behavior of oxygen diffusion in buffer layers for coated conductors

“…However, when the crystallized oxide films are annealed in oxidization atmosphere, their structural stability would be seriously challenged due to the possible diffusion of oxygen atoms and the lowered density of the lattice oxygen vacancies. The optimal oxygen partial pressure is 0.1% during preparation of superconducting layers in coated conductors [17][18][19], so we select the oxidation atmosphere with the oxygen partial pressure from 0.5% to 100%, in which LZO films on YSZ (0 0 l) single crystal substrate and NiW substrate are annealed. The effect of annealing in oxygen on the structure and texture of LZO films is investigated.…”