Effects of the oxide/interface traps on the electrical characteristics in Al/Yb2O3/SiO2/n-Si/Al MOS capacitors

Morkoç, Berk; Kahraman, Ayşegül; Yılmaz, Ercan

doi:10.1007/s10854-021-05588-0

Cited by 8 publications

(5 citation statements)

References 30 publications

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“…The peaks at 55.6 eV and 54.8 eV for Se 3d5/2 and Se 3d3/2, respectively, are associated with Se 2− ions.Yb 4d orbitals consist of doublet peaks at 183.7 eV and 180.5 eV, showing the presence of Yb in the NPLs. Similar values are reported in literature by various groups[126,127].…”

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Heterostructures of atomically flat semiconductor nanocrystals: from synthesis to LED applications

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“…Figure 1g illustrates the Yb 4d spectra fitted using the Gauss–Lorentz (G–L) function to seven peaks. [ 24 ] Since the Yb 2+ state has a filled 4f sub‐shell, any interaction between a hole and the 4f electrons can be disregarded. [ 24 ] The Yb 3+ oxidation level is greatly influenced by Coulomb interaction, leading to the observation of peaks around 185.9, 192.6, 199.1, and 205.3 eV.…”

Section: Materials Characterizationmentioning

confidence: 99%

“…[ 24 ] Since the Yb 2+ state has a filled 4f sub‐shell, any interaction between a hole and the 4f electrons can be disregarded. [ 24 ] The Yb 3+ oxidation level is greatly influenced by Coulomb interaction, leading to the observation of peaks around 185.9, 192.6, 199.1, and 205.3 eV. [ 24 ] The O 1s were analyzed using two G–L functions, as depicted in Figure 1h.…”

Section: Materials Characterizationmentioning

confidence: 99%

“…[ 24 ] The Yb 3+ oxidation level is greatly influenced by Coulomb interaction, leading to the observation of peaks around 185.9, 192.6, 199.1, and 205.3 eV. [ 24 ] The O 1s were analyzed using two G–L functions, as depicted in Figure 1h. Within these spectra, the low‐energy peaks at around 528.3 eV are associated with the Yb─O─Yb bond, while the higher‐energy peaks at ≈531.1 eV indicate the presence of bonded oxygen species.…”

Section: Materials Characterizationmentioning

confidence: 99%

“…Within these spectra, the low‐energy peaks at around 528.3 eV are associated with the Yb─O─Yb bond, while the higher‐energy peaks at ≈531.1 eV indicate the presence of bonded oxygen species. [ 24 ] Comparing the intensity peaks of O 1s in Yb 2 O 3 and ZnO, the density of oxygen defects in ZnO is much higher than Yb 2 O 3 layer, further details can be found in the mechanism section.…”

Section: Materials Characterizationmentioning

confidence: 99%

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Effects of the oxide/interface traps on the electrical characteristics in Al/Yb2O3/SiO2/n-Si/Al MOS capacitors

Cited by 8 publications

References 30 publications

Heterostructures of atomically flat semiconductor nanocrystals: from synthesis to LED applications

Heterostructures of atomically flat semiconductor nanocrystals: from synthesis to LED applications

Unidirectional Neuromorphic Resistive Memory Integrated with Piezoelectric Nanogenerator for Self‐Power Electronics

Solvothermal Synthesis of Medium‐Entropy Oxide Spheres for Thermocatalytic Conversion of CO₂ to Methanol

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Effects of the oxide/interface traps on the electrical characteristics in Al/Yb2O3/SiO2/n-Si/Al MOS capacitors

Cited by 8 publications

References 30 publications

Heterostructures of atomically flat semiconductor nanocrystals: from synthesis to LED applications

Heterostructures of atomically flat semiconductor nanocrystals: from synthesis to LED applications

Unidirectional Neuromorphic Resistive Memory Integrated with Piezoelectric Nanogenerator for Self‐Power Electronics

Solvothermal Synthesis of Medium‐Entropy Oxide Spheres for Thermocatalytic Conversion of CO2 to Methanol

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Product

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Solvothermal Synthesis of Medium‐Entropy Oxide Spheres for Thermocatalytic Conversion of CO₂ to Methanol