Effet dimensionnel classique dans des couches minces de bismuth et d'antimoine

Pariset, C.

doi:10.1016/0040-6090(82)90253-x

Cited by 30 publications

References 30 publications

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A study of the resistivity and the thermoelectric power of thin films of Sb and Bi

Akhtar

Khawaja

1985

phys. stat. sol. (a)

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The electrical resistivity and thermoelectric power are measured as a function of the film thickness on vacuum deposited antimony and bismuth films. The experimental results are in good agreement with the approximate form of the size effect theory of Fuchs‐Sondheimer. There is some indication of oscillation in the resistivity data of bismuth films in the range of small thicknesses (20 to 70 nm), which may be related to the quantum size effect. However, no such oscillation is observed in antimony films. The resistivity and the thermoelectric power approach the values close to those of well‐ordered bulk antimony and bismuth when extrapolated to infinite thickness. The thin films are used for the detection of short laser pulses. Pulses from a Q‐switched Nd‐glass laser are detected. A rise time (i.e. from 10 to 90%) of about 10 ns and a decay time (i.e. 90 to 10%) of about 60 ns is measured.

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A study of the resistivity and the thermoelectric power of thin films of Sb and Bi

Akhtar

Khawaja

1985

phys. stat. sol. (a)

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Ion beam induced mixing of the Cu/Si system using electrical resistivity and RBS measurements

El-Haija

Al‐Saleh

Halim

et al. 1988

Phys. Stat. Sol. (a)

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The ion-beam mixing of Cu thin films evaporated on silicon is investigated by measuring continuously the electrical resistivity of the samples during Kr ion irradiation. Rutherford backscattering spectra with 2.0MeV He ions are measured after beam irradiation. The resistivity results exhibit a tendency toward a saturation process and allow the determination of the critical dose corresponding to the total mixing condition. The dependence of the normalized variation of the conductivity of intermixed atoms on the ion dose is deduced and compared with a semiempirical formula to explain the observed mixing kinetics. The above results are confirmed with the RBS measurements. Mittels kontinuierlicher Messung des elektrischen Widerstands der Proben wiihrend Kr-Ionenbestrahlung wird die Ionenstrahlmischung von diinnen auf Silizium aufgedampften Cu-Schichten untersucht. Rutherfordriickstreuspektren mit 2,O MeV-He-Ionen werden nach der Bestrahlung gemessen. Die Widerstandsergebnisse zeigen eine Tendenz zu einem SiittigungsprozeB und erlauben die Bestimmung der kritischen Dosis entsprechend der Bedingung vollstiindiger Mischung. Die Abhingigkeit der normierten Variation der Leitfihigkeit von vermischten Atomen von der Ionendosis wird abgeleitet und mit einer halbempirischen Formel zur Erkliirung der beobachteten Mischungskinetik verglichen. Die dargelegten Ergebnisse werden mit RBS-Messungen erhirtet.

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Temperature and thickness dependence of electrical and thermal transport coefficients of Bi_1–xSb_x films in an anisotropic, non‐degenerate two‐band model

Völklein

Kessler

1986

Physica Status Solidi (b)

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The thickness and temperature dependences of electrical and thermal transport coefficients (e.g. electrical conductivity, thermoelectric power, thermal conductivity) of Bil -,Sb, films are described by a non-degenerated two-band model, considering the anisotropic elliptical band structure (manyvalley model) of bulk Bil -,Sb,. The transport coefficients are measured in the temperature range 80 to 400 K on films with thicknesses 20 to 400 nm and the results are interpreted and discussed using the deduced relations.Die Schichtdicken-und Temperaturabhangigkeit elektrischer und thermischer Transportkoeffizienten (z. B. der elektrischen Leitfahigkeit, der Thermokraft, der Warmeleitfiihigkeit) von Bil -,Sb,-Schichten wird im Rahmen eines nicht entarteten Zweiband-Modells unter Berucksichtigung der anisotropen elliptischen Bandstruktur (many valley model) von massivem Bil -%Sb, beschrieben. Die Transportkoeffizienten werden im Temperaturbereich 80 bis 400 K an Schichten von 20 bis 400 nm Dicke gemessen, und die Ergebnisse werden mit den abgeleiteten Beziehungen interpretiert und diskutiert.

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Effet dimensionnel classique dans des couches minces de bismuth et d'antimoine

Cited by 30 publications

References 30 publications

A study of the resistivity and the thermoelectric power of thin films of Sb and Bi

A study of the resistivity and the thermoelectric power of thin films of Sb and Bi

Ion beam induced mixing of the Cu/Si system using electrical resistivity and RBS measurements

Temperature and thickness dependence of electrical and thermal transport coefficients of Bi_1–xSb_x films in an anisotropic, non‐degenerate two‐band model

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Effet dimensionnel classique dans des couches minces de bismuth et d'antimoine

Cited by 30 publications

References 30 publications

A study of the resistivity and the thermoelectric power of thin films of Sb and Bi

A study of the resistivity and the thermoelectric power of thin films of Sb and Bi

Ion beam induced mixing of the Cu/Si system using electrical resistivity and RBS measurements

Temperature and thickness dependence of electrical and thermal transport coefficients of Bi1–xSbx films in an anisotropic, non‐degenerate two‐band model

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Temperature and thickness dependence of electrical and thermal transport coefficients of Bi_1–xSb_x films in an anisotropic, non‐degenerate two‐band model