Efficient compact modelling of UTC-photodiode towards terahertz communication system design

Abstract

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Towards Monolithic Indium Phosphide (InP)-Based Electronic Photonic Technologies for beyond 5G Communication Systems

“…As justified previously, the photonic community has been missing the equivalent tools in the context of optical devices and therefore, multiphysics formulation is crucial for the successful integration of electronic and photonic devices. With that in mind, as a first step, we present a modeling framework for both devices through an assembly of SPICE compact models for InP bipolar transistor (HiCuM [12]) and UTC photodiodes (in-house [13]). In the following section, we describe the fundamentals of these two models.…”

“…The compact model for the UTC-PDs reported in [13] is a Verilog-A model for describing the semiconductor physics governing the junction currents and the optical response of the photodiode. The model is further enhanced by incorporating improved descriptions of the dark and photocurrents.…”

“…In forward bias conditions, the dark current of the UTC-PDs is modeled by sical diode reverse saturation current, IS [13]. In reverse bias, in addition to the s current and the breakdown current modeled in [13], two other contributions h introduced to improve model accuracy: the band-to-band tunneling current, and the trap-assisted tunneling current, (in A). The tunneling effect is requir scribe the dominant current contribution under high reverse bias (V < −1) conditio general case, the tunneling current takes the following form [15]…”

“…These parameters can be extracted from model optimization at low reverse bias. It should be noted that the temperature dependence of the static behavior of the dark current is captured through J S (T), C j0 (T) and V j (T) and the junction temperature is recalculated dynamically via an external thermal network [13].…”

“…To take into account the self-heating effect in the UTC photodiodes, a classical thermal network, consisting of a thermal resistance and capacitances, has already been implemented in the compact model, as described in [13]. From the extraction point of view, the The thermal resistances and capacitances for the three regions of the intrinsic device are shown in Table 1, extracted from compact model simulations, for six geometries with different emitter lengths and two chosen emitter widths of 0.5 and 0.7 µm.…”