Efficient fundamental frequency oscillation from millimetre-wave indium phosphide
 n
 +
 -
 n
 -
 n
 +
 transferred electron oscillators

Eddison, I.G.; Davies, I.; Giles, P.L.; Brookbanks, D.M.

doi:10.1049/el:19810533

Cited by 17 publications

(2 citation statements)

References 4 publications

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“…The experimental results from the D-band IMPATT diodes are the best reported to date. The power levels and efficiencies of the W-band TUNNETT diodes above 93.5 GHz are the highest reported so far and compare favorably to the values of Gunn devices [13][14][15] above 100 GHz. InP Gunn devices can be operated in fundamental mode up to D-band frequencies exceeding the power levels that have been published so far.…”

Section: Resultssupporting

confidence: 55%

Active two-terminal devices as local oscillators for low-noise receiver systems at submillimeter wave frequencies

Eisele

Kamoua

Haddad

et al. 1993

Archiv f. Elektrotechnik

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The power capabilities of three different two-terminal devices, GaAs IMPATT diodes, inP Gunn devices and GaAs TUNNETT diodes are evaluated. Two different selective etching technologies have been employed to fabricate devices on either a diamond heat sink or an integral heat sink. The reported RF power levels in fundamental mode are 20 mW at 120 GHz and 15 mW at 135 GHz for D-band GaAs IMPATT diodes, 21 mW at 120 GHz, 17 mW at 133 GHz and 8 mW at 155 GHz for D-band InP Gunn devices and up to 35 mW around 103 GHz for W-band GaAs TUNNETT diodes. Typical dc to RF conversion efficiencies range from 0.9% up to over 4.0%, In second harmonic mode power levels of 0.25 mW at 223 GHz were measured from TUNNETT diodes and 0.4 mW at 220 GHz from a Gunn device. Aktive Zweipol-Bauelemente als Lokaloszillatoren fiir rauscharme Empfiingersysteme im Frequenzgebiet der Submillimeterwellen Ubersicht: Die Leistungsf/ihigkeit dreier verschiedener Zweipolbauelemente, GaAs-IMPATT-Dioden, InP-Gunn-Bauelemente und GaAs-TUNNETT-Dioden, wird untersucht. Zwei unterschiedliche Herstellungsverfahren mit selektivem ~tzen wurden eingesetzt, um Bauelemente auf einer Diamant-bzw. integrierten Wfirmesenke herzustellen. Hochfrequenzausgangsleistungen yon 20roW bei 120 GHz und 15 mW bei 135 GHz wurden mit GaAs-IMPATT-Dioden ffir das D-Band erzielt, 21 mW bei 120 GHz, 17 mW bei 133 GHz und 8 mW bei 155 GHz mit InP-Gunn-Bauelementen fiir das D-Band und bis zu 35 mW um 103 GHz mit GaAs-TUN-NETT-Dioden ffir das W-Band. Typische Hochfrequenzwirkungsgrade lagen zwischen 0,9% und fiber 4%. Bei der ersten Oberwelle wurden mit TUNNETT-Dioden HF-Leistungen von 0,25 mW bei 223 GHz gemessen und 0,4 mW bei 220 GHz mit einem Gunn-Bauelement. gies. The experimental results on D-band InP Gunn devices agree well with simulations [3] and indicate that fundamental mode operation can be extended to the upper D-band. Since IMPATT diodes, TUNNETT diodes and Gunn devices are nonlinear devices, this paper also focuses on harmonic power extraction.

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Section: Resultssupporting

confidence: 55%

Active two-terminal devices as local oscillators for low-noise receiver systems at submillimeter wave frequencies

Eisele

Kamoua

Haddad

et al. 1993

Archiv f. Elektrotechnik

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“…a maximum CW output power of 150 mW at 94GHz with an efficiency of 3.5%. At higher frequencies the following experimental results have been reported: 30 mW at 97 GHz [3], 35 mW at 105.8 GHz [4], 10 mW at 110 GHz [5], 7 mW at 180 GHz [7], and 0.2mW at 272GHz [7]. The results at 180 and 272 GHz were obtained from InP Gunn devices operating in second and third harmonic modes, respectively.…”

Section: Introductionmentioning

confidence: 99%

D-band (110–170 GHz) InP gunn devices

Kamoua

Eisele

Haddad

1993

Solid-State Electronics

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This paper reports on the development of InP Gunn sources for operation in the D-band (li0-170GHz). n+-n-n + structures with flat doping as well as graded doping profiles have been considered. Oscillations were obtained at 108.3 GHz from a 1 #m structure with a uniform n doping of 2.5 x 1016cm-3. The CW RF output power was 33 roW. A 1 #m graded structure with an n doping increasing linearly from 7.5 x 10 ~5 to 2.0 x 10~6cm-3 has resulted in 20roW at 120GHz and 10roW at 136 GHz. These results are believed to correspond to a fundamental mode operation and represent the state-of-the-art performance from InP Gunn devices at these frequencies. This improvement in performance is attributed in part to a processing technique based on the use of etch-stop layers and lnGaAs cap layers. An etch-stop layer allows low-profile mesas (2-3/~m) and InGaAs cap layers help reduce the contact resistance, thus minimizing series resistances in the device. In addition, a physical model based on the Monte Carlo method was developed to aid in the design of structures for high frequency operation. Experimental results obtained from a 1.7#m Gunn device operating at W-band frequencies were used to estimate appropriate InP material parameters.

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Elektronen-Transfer-Bauelemente

Schlachetzki

1984

Halbleiterbauelemente Der Hochfrequenztechnik

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Efficient fundamental frequency oscillation from millimetre-wave indium phosphide n ⁺ - n - n ⁺ transferred electron oscillators

Cited by 17 publications

References 4 publications

Active two-terminal devices as local oscillators for low-noise receiver systems at submillimeter wave frequencies

Active two-terminal devices as local oscillators for low-noise receiver systems at submillimeter wave frequencies

D-band (110–170 GHz) InP gunn devices

Elektronen-Transfer-Bauelemente

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Efficient fundamental frequency oscillation from millimetre-wave indium phosphide n + - n - n + transferred electron oscillators

Cited by 17 publications

References 4 publications

Active two-terminal devices as local oscillators for low-noise receiver systems at submillimeter wave frequencies

Active two-terminal devices as local oscillators for low-noise receiver systems at submillimeter wave frequencies

D-band (110–170 GHz) InP gunn devices

Elektronen-Transfer-Bauelemente

Contact Info

Product

Resources

About

Efficient fundamental frequency oscillation from millimetre-wave indium phosphide n ⁺ - n - n ⁺ transferred electron oscillators