“…What's more, this low‐temperature ZTO mesoporous layer avoids many interface problems in other structures, for example, the photo‐induced defect from TiO 2 , film pinholes of SnO 2 , surface recombination and poor stability of ZnO‐based PSCs, etc. For the non‐infiltration of SnO 2 ‐ETL and the interface of perovskite/SnO 2 , firstly, the application of ZTO mesoporous layer aids in the growth of perovskite crystals by increasing the number of nucleation sites available for layer formation; secondly, ZTO layer reduces the trap state density on the SnO 2 layer and improves the surface wettability, thereby ameliorating the morphology of the perovskite film; thirdly, protects perovskite at the perovskite‐ETL interface, thus improving the stability of devices.…”