Elaboration of Monocrystalline Si Thin Film on 3C-SiC(100)/Si Epilayers by Low Pressure Chemical Vapor Deposition

Abstract

The growth of continuous silicon monocrystalline thin films on 3C-SiC epilayers deposited on silicon substrates is presented in this study. Such heterostructures can be beneficial for the fabrication of Micro Electro Mechanical Systems or electronic applications. The elaboration of these heterostructures was carried out using Low Pressure Chemical Vapor Deposition. X-ray Diffraction, Fourier Transformed Infra-Red spectroscopy and Scanning Electron Microscopy have been used to investigate the structural properties of Si epilayers and their dependence on growth conditions. Monocrystalline Si (110) films are obtained on 3CSiC(100)/Si (100) substrates, only when using growth temperatures close to 850°C. The strong influence of the underlying 3C-SiC film on the final structural properties of Si epilayer is evidenced.

How to Grow Fully (100) Oriented SiC/Si/SiC/Si Multi‐Stack

“…Our results on the growth of Si on standard 3C‐SiC seeds are very similar to the ones found in the literature, with the preferential formation of columnar [110] oriented Si on top of 3C‐SiC(100) . According to this literature, this preferential epitaxial orientation should come from the minimization of the interfacial lattice mismatch . Our results show that such selection process is very effective as long as the 3C‐SiC(100) seed is standard and smooth, since it was found almost independent on growth parameters such as temperature or growth rate.…”

“…In this reverse heteroepitaxial system, the difficulties result not only from the 20% lattice mismatch between the two materials, but also from the absence of adequate buffer layer to accommodate this mismatch when growing Si on SiC. As a matter of fact, the grown Si layers on top of 3C‐SiC(100) seeds are almost always columnar with [110] oriented grains . This orientation change, from [100] of the 3C‐SiC seed to [110] of the Si layer, has been attributed to better accommodation of lattice constant parameter between Si and SiC .…”

“…As a matter of fact, the grown Si layers on top of 3C‐SiC(100) seeds are almost always columnar with [110] oriented grains . This orientation change, from [100] of the 3C‐SiC seed to [110] of the Si layer, has been attributed to better accommodation of lattice constant parameter between Si and SiC . Moreover, these Si layers suffer also from the fact that the 3C‐SiC seed is far from being perfect.…”

Silicon (001) Heteroepitaxy on 3C-SiC(001)/Si(001) Seed

“…The main difficulty comes not only from the 20% lattice mismatch of this system but also from the difficulty in starting the growth with an adequate buffer layer. As a matter of fact, the grown layers are almost always columnar and [110] oriented [1][2][3]. Despite this, the stacking comprising Si(100) sub /SiC(100)/Si(110)/SiC(poly) was studied for Micro-Electro-Mechanical-Systems (MEMS) applications [4].…”

Silicon Growth on 3C-SiC(001)/Si(001): Pressure Influence and Thermal Effect

“…The improvement of the Si films crystalline quality during their growth, as well as a good knowledge about the way they can be affected by further thermal treatments, are mandatory for optimizing the final characteristics of the targeted MEMS structures. Our group has previously reported about the influence of the growth temperature on the crystalline quality of the Si films [8]. In this work, we will focus on further ways to improve the crystalline quality of the Si layer both during the growth stage and after the growth, by performing thermal annealing.…”