Electric Field Effect on the Al-MgO-YBa2Cu3Oy Structure

Kabasawa, Uki; Asano, Keiko; Kobayashi, Takeshi

doi:10.1143/jjap.29.l86

Cited by 57 publications

(4 citation statements)

References 9 publications

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“…Since 1960, many scientists made an effeort to modulate the superconducting properties by using transverse static electric fields 12. The investigations of field‐induced superconductivity were extended to copper oxides with the high‐ T c superconductivity 13–17. The persistent photoconductivity and metastable photo‐induced superconductivity was first discovered experimentally by Kudinov 18 in the copper oxides such as YBa 2 Cu 3 O 7−δ (Y‐123).…”

Section: Introductionmentioning

confidence: 99%

Theoretical studies on field‐induced superconductivity in molecular crystals

Nagao

Kitagawa

Kawakami

et al. 2001

Int J of Quantum Chemistry

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ABSTRACT:We investigate superconductivity of molecular crystals induced by charge injection by using a two-band model based on the Green function techniques. Expressions of transition temperature for several phases derived from the model are summarized. The model is applied to a model of CuO 2 plane for copper oxides, anthracene, oligothiophene, and C 60 crystals and phase diagrams of the crystals are presented. It is important that the band structure of crystals is described by a two-or multiband model for realization of high-T c superconductivity.

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Section: Introductionmentioning

confidence: 99%

Theoretical studies on field‐induced superconductivity in molecular crystals

Nagao

Kitagawa

Kawakami

et al. 2001

Int J of Quantum Chemistry

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“…Therefore, we report here on the results using La 1.99 Sr 0.01 CuO 4 as a FET channel material. The device structure was similar to that of the superconducting FETs, 14,15 and Pb 0.95 La 0.05 Z 0.2 Ti 0.8 O 3 ͑PLZT͒ was used as a ferroelectric gate insulator. All measurements were done at room temperature.…”

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confidence: 99%

Epitaxial all-perovskite ferroelectric field effect transistor with a memory retention

Watanabe

1995

Applied Physics Letters

147

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All-perovskite ferroelectric field effect transistors (FET) are proposed, and switching behaviors of the prototype devices having a (Pb,La)(Zr,Ti)O3 as a gate insulator and a La1.99Sr0.01CuO4 as a channel layer were demonstrated. Marked improvements in device performances were obtained as compared with the previous ferroelectric FETs. Namely, the present device was written and erased at an operating voltage of 7 V with a pulse width of less than 1 ms, yielding resistance modulation up to about 10% and retaining its memory for more than 10 days at room temperature. Examinations show that the switching speed was limited by a delay constant and can therefore be improved up to 1 μs, and that the memory retention may not be limited by an intrinsic ferroelectric instability as previously suggested.

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“…An example of this structure was a SrTiO 3 /cuprate superconductor to modulate the superconductivity by the field effect. 1…”

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confidence: 99%

Ferroelectric/(La,Sr)2CuO4 epitaxial heterostructure with high thermal stability

Watanabe

Tanamura

Matsumoto

et al. 1995

Applied Physics Letters

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Three-dimensionally aligned epitaxial (Pb,La)(Zr,Ti)O3/(La,Sr)2CuO4 multilayers were grown on SrTiO3 (100) single crystals by pulse laser deposition. A cube-on-cube epitaxial relationship of these multilayers was confirmed by the θ-2θ diffraction profile and the pole figure. The stability of their interfaces was confirmed by depth profiles and x-ray diffractometry of the as-deposited and the annealed multilayers having 100–300-Å-thick (La,Sr)2CuO4 layers. The results suggest that the multilayers can be applied to the ferroelectric field-effect transistor.

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Electric Field Effect on the Al-MgO-YBa₂Cu₃O_y Structure

Cited by 57 publications

References 9 publications

Theoretical studies on field‐induced superconductivity in molecular crystals

Theoretical studies on field‐induced superconductivity in molecular crystals

Epitaxial all-perovskite ferroelectric field effect transistor with a memory retention

Ferroelectric/(La,Sr)2CuO4 epitaxial heterostructure with high thermal stability

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