Electrical and carrier transport properties of Au/Pr6O11/n-GaN MIS structure with a high-k rare-earth oxide interlayer at high temperature range

The temperature induced current transport characteristics in the orthoferrite YbFeO3− δ thin film/p-type Si structure

“…As mentioned above, the shape of the nkT versus kT curve in figure 10 tells us that the current transport mechanism across the device is controlled by the FE current. Therefore, we can suggest that the I -V characteristics of the forward bias in figure 7 agrees with FE model, as suggested in [101][102][103][104].…”

“…This gives us information about assumption of the spatial inhomogeneous distribution of SB heights. Some authors [103][104][105][106][107][108][109][110][111][112][113][114][115][116] have suggested that the barrier inhomogeneities can form due to inhomogeneities in the interfacial layer composition, non-uniformity of the interfacial charges and interfacial thin layer. The presence of the spatial inhomogeneity or potential fluctuations at the contact materials can greatly affect the current across the device.…”

“…The current through a low-BH patch thus depends on the height of the 'saddle point' in front of the patch, and not on the local BH at the MS interfaces. Therefore, the current across device may seem such as the conduction mechanism by thermionic field emission (TFE) or FE [75,[103][104][105]. Two-dimensional energy band diagram of this kind of transport mechanism for a potential barrier diode can be seen by in figure 5(a) of reference [105].…”