Electrical conduction in polycrystalline diamond and the effects of UV irradiation

Gonon, P.; Prawer, Steven; Boiko, Yu. I.; Jamieson, D. N.

doi:10.1016/s0925-9635(96)00675-9

Cited by 21 publications

(8 citation statements)

References 17 publications

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“…[8][9][10][11][12][13] The UNCD samples we tested also exhibit nonlinear conductiv-ity, as observed during the I − V experiments and shown in Fig. [8][9][10][11][12][13] The UNCD samples we tested also exhibit nonlinear conductiv-ity, as observed during the I − V experiments and shown in Fig.…”

Section: E the Dependence Of Conduction Property On The Structure Ofsupporting

confidence: 55%

“…Poole-Frenkel ͑P-F͒ models with single and overlapping Coulombic potentials [8][9][10][11][12][13] show that the conduction is directly correlated with the sp 2 -bond carbon density and the role of hydrocarbon bonds in the conduction path formed by the sp 2 -bonded carbon, both of which act on the formation of extended networks of bonds. The deposition temperature affects the ratio of sp 2 and sp 3 bonding, the hydrogen content, as well as the crystalline structure.…”

Section: Introductionmentioning

confidence: 99%

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Electrical conduction in undoped ultrananocrystalline diamond thin films and its dependence on chemical composition and crystalline structure

Correa

Wen

et al. 2007

Journal of Applied Physics

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Ultrananocrystalline diamond film deposition by direct-current plasma assisted chemical vapor deposition using hydrogen-rich precursor gas in the absence of the positive columnInteresting trends in direct current electrical conductivity of chemical vapor deposited diamond sheetsThe electrical conduction behavior of undoped ultrananocrystalline diamond ͑UNCD͒ and its dependence on deposition temperature and chemical structure are presented. UNCD films were grown using a microwave plasma-enhanced chemical vapor deposition technique at deposition temperatures of 400°C and 800°C. The chemical structure of the UNCD films is characterized with several tools including: Elastic recoil detection analysis, Fourier transform infrared spectroscopy, electron energy loss spectroscopy, Raman spectroscopy, and environmental scanning electron microscope. The results show a higher content of sp 2 -bonded carbon for the 800°C deposition samples ͑ϳ65%͒ in comparison with the 400°C samples ͑ϳ38%͒. In both kinds of films, the hydrocarbon bonds have the saturated sp 3 structures, while there is lower hydrogen content in the 800°C samples ͑ϳ8%͒ than in the 400°C samples ͑ϳ10%͒. For conduction properties, experiments are conducted using a probe station and conductive-atomic force microscopy. Experimental data show that the samples deposited at 800°C are several orders of magnitude more conductive than the 400°C samples. The conduction occurs primarily along the grain boundary for both types of samples. The conductivity of both types of films also shows field dependent nonlinear behavior. Both the Poole-Frenkel models and single and overlapping Coulombic potential models show that the conduction is directly correlated with the sp 2 bond carbon density, and the role of the hydrocarbon bonds in the conduction path is formed by the network of the sp 2 bonded carbon.

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Section: E the Dependence Of Conduction Property On The Structure Ofsupporting

confidence: 55%

Section: Introductionmentioning

confidence: 99%

Electrical conduction in undoped ultrananocrystalline diamond thin films and its dependence on chemical composition and crystalline structure

Correa

Wen

et al. 2007

Journal of Applied Physics

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“…This is because they all exhibit either a small capture cross section, or an insufficient concentration of traps. It is worth noting at this point that Gonon et al 18 reported a level at 1.86 eV with a cross section as high as 3ϫ10 Ϫ13 cm 2 ; however, an evaluation of the trap concentration is missing in this work. The levels around 1 eV reported in the past exhibit capture times ranging from 10 to several 100 ns.…”

Section: B Effect On Carrier Lifetimementioning

confidence: 75%

“…A condition for the improvement in the ccd is a thorough understanding of the charge collection properties of CVD diamond particle detectors, which translates into a major effort to study in detail the distribution of deep levels. In the past, the following methods have been used to extract information about deep energy levels in CVD diamond: dark conductivity, [17][18][19] electroluminescence, 20 transient photocurrent, [7][8][21][22][23] photoconductivity ͑PC͒. 24,25 However, only thermal spectroscopy techniques allow to determine simultaneously the activation energies E t and capture cross sections of the traps.…”

Section: Introductionmentioning

confidence: 99%

“…29 In the many studies found in the literature, one or more of these thermal spectroscopy techniques has been used in the investigation of boron-doped CVD diamond, [30][31][32] and undoped CVD diamond. 18,[25][26][27][28][29][30][31][32][33][34][35][36][37] In some of these works, the capture cross section has been calculated explicitly, while in other cases it can be deduced either from the activation energy and the glow curve peak position, or from the TL frequency factor s. However, in general, values of deduced solely from a single experimental technique have a large systematic uncertainty, because spectra are composed of many overlapping deep level contributions, and thus can be explained by different sets of pairs of parameters (E t ,).…”

Section: Introductionmentioning

confidence: 99%

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Deep levels and trapping mechanisms in chemical vapor deposited diamond

Bruzzi

Menichelli

Sciortino

et al. 2002

Journal of Applied Physics

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Detector-grade undoped chemical vapor deposited ͑CVD͒ diamond samples have been studied with thermally stimulated currents ͑TSC͒ and photoinduced current transient spectroscopy ͑PICTS͒ analyses in the temperature range 300-650 K. Two previously unknown defects have been identified, characterized by activation energies E 1 ϭ1.14 eV and E 2 ϭ1.23 eV, cross sections of about Ϸ10 Ϫ13 cm 2 and concentrations of N t Ϸ10 16 cm Ϫ3. They have been clearly observed by PICTS and isolated in TSC measurements by use of a fractional annealing cycle in the temperature range 300-400 K. Due to their trap parameters, in particular the high cross section, the levels corresponding to E 1 and E 2 are characterized by capture times of the order of 10-100 ps. A dominant TSC peak observed at Ϸ500 K has been also investigated and has been resolved into four components with activation energies of the order of 1 eV and cross sections in the range 10 Ϫ19-10 Ϫ17 cm 2. Three of these levels exhibit a fast capture rate ͑0.1-10 ns͒ in spite of their small cross sections, due to their high concentration in the investigated sample. Correlating our results with room temperature charge collection studies, we propose that the observed traps with their fast capture rates can be effective in limiting the carrier lifetimes and, consequently, the charge collection efficiency of CVD diamond particle detectors

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Diamond-Based 1-D Imaging Arrays

Lansley

Williams

et al. 2002

phys. stat. sol. (a)

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Electrical conduction in polycrystalline diamond and the effects of UV irradiation

Cited by 21 publications

References 17 publications

Electrical conduction in undoped ultrananocrystalline diamond thin films and its dependence on chemical composition and crystalline structure

Electrical conduction in undoped ultrananocrystalline diamond thin films and its dependence on chemical composition and crystalline structure

Deep levels and trapping mechanisms in chemical vapor deposited diamond

Diamond-Based 1-D Imaging Arrays

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