Electrical evaluation of innovating processes for improving SOS materials

Pretet, J.; Cristoloveanu, S.; Hefyene, N.; Matsui, Masahiro; Moriyasu, Yoshitaka; Kawakami, Yoshifumi

doi:10.1016/s0167-9317(01)00640-2

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“…Due to the large thermal expansion coefficient of Al 2 O 3, a silicon film is under a relatively high compressive stress [5]. Currently, a new technique, solid-phase epitaxial (SPE) regrowth process, has been applied successfully to significantly reduce the defect concentration and residual stress [6][7][8][9]. Some of present authors have shown that room temperature Si selfimplantation enables to form a satisfactory amorphous layer and leads to the improvement of SOS materials upon high-temperature thermal annealing.…”

Section: Introductionmentioning

confidence: 99%