Electrical Performance and Reliability of Tunnel Magnetoresistance Heads for 100-&amp;gt;tex&amp;lt;$hboxGb/in^2$&amp;gt;/tex&amp;lt;Application

Kuwashima, T.; Fukuda, K.; Kiyono, H.; Sato, Kazuki; Kagami, T.; Saruki, S.; Uesugi, Takumi; Kasahara, N.; Ohta, N.; Nagai, K.; Hachisuka, N.; Takahashi, Norio; Naoe, M.; Miura, S.; Barada, K.; Kanaya, Tomoaki; Inage, K.; Kobayashi, Atsushi

doi:10.1109/tmag.2003.821203

Cited by 21 publications

(5 citation statements)

References 11 publications

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“…20,21) We also obtained TMR ratios of 130% at RA ¼ 1:7 mm 2 and 165% at RA ¼ 2:9 mm 2 , which are about eight to ten times greater than the ratios of aluminum oxide barrier MTJs with similar RA. 22,23) Figure 3 shows the bias voltage dependence of TMR ratio at 5 K and RT for a MTJ with a 1.5-nm-thick MgO barrier deposited at 10 mTorr and annealed at 400 C. This device has a Ru underlayer. The bias voltage was defined as positive when electrons were flowing from the bottom to the top layer.…”

mentioning

confidence: 99%

Dependence of Tunnel Magnetoresistance in MgO Based Magnetic Tunnel Junctions on Ar Pressure during MgO Sputtering

Ikeda

Hayakawa

Lee

et al. 2005

Jpn. J. Appl. Phys.

107

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ReceivedWe investigated dependence of tunnel magnetoresistance effect in CoFeB/MgO/CoFeB magnetic tunnel junctions on Ar pressure during MgO-barrier sputtering. Sputter deposition of MgO-barrier at high Ar pressure of 10 mTorr resulted in smooth surface and highly (001) oriented MgO. Using this MgO as a tunnel barrier, tunnel magnetoresistance (TMR) ratio as high as 355% at room temperature (578% at 5K) was realized after annealing at 325 o C or higher, which appears to be related to a highly (001) oriented CoFeB texture promoted by the smooth and highly oriented MgO. Electron-beam lithography defined deep-submicron MTJs having a low-resistivity Auunderlayer with the high-pressure deposited MgO showed high TMR ratio at low resistance-area product (RA) below 10 Ωμm 2 as 27% at RA = 0.8 Ωμm 2 , 77% at RA = 1.1 Ωμm 2 , 130% at RA = 1.7 Ωμm 2 , and 165% at RA = 2.9 Ωμm 2 .

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mentioning

confidence: 99%

Dependence of Tunnel Magnetoresistance in MgO Based Magnetic Tunnel Junctions on Ar Pressure during MgO Sputtering

Ikeda

Hayakawa

Lee

et al. 2005

Jpn. J. Appl. Phys.

107

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“…First, the MR ratio of TMR is very high. [1], [2], [3], [4], [5] Consequently, the signal output can be greatly higher than other magnetic sensors.…”

Section: Feature and Principlementioning

confidence: 99%

B8.4 - Characterisitics of TMR Angle Sensors

Yamazaki¹,

Hirabayashi²,

Oyama³

et al. 2011

Proceedings SENSOR 2011

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“…O NE OF THE tunneling magnetoresistive (TMR) [1], [2] head's problems [3], [4] is electric instability [5]- [7]. The head instability occurrence rate depends on the environment HDD that is operated at.…”

Section: Introductionmentioning

confidence: 99%

Read Performance Reliability in TMR Head

Miyatake

Kugiya

Kodama

2012

IEEE Trans. Device Mater. Relib.

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Causes of head instability and design improvements in tunneling magnetoresistive heads are discussed. Head instability results in output signal amplitude changes and/or signal distortion due to the output noise. Under accelerated environmental conditions, a test using an original "ΔV −H tester" was done to study and analyze the conditions of which instability occurs. From the result of the test, instability was classified into four categories. The improved sample heads were prepared, and the effectiveness was proved.Index Terms-Instability, thermal fly-height control (TFC), tunneling magnetoresistive (TMR) head, ΔV −H tester.

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Electrical Performance and Reliability of Tunnel Magnetoresistance Heads for 100->tex<$hboxGb/in^2$>/tex<Application

Cited by 21 publications

References 11 publications

Dependence of Tunnel Magnetoresistance in MgO Based Magnetic Tunnel Junctions on Ar Pressure during MgO Sputtering

Dependence of Tunnel Magnetoresistance in MgO Based Magnetic Tunnel Junctions on Ar Pressure during MgO Sputtering

B8.4 - Characterisitics of TMR Angle Sensors

Read Performance Reliability in TMR Head

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