Electrical permittivity driven metal-insulator transition in heterostructures of nonpolar Mott and band insulators

Abstract

Metallic interfaces between insulating perovskites are often observed in heterostructures combining polar and nonpolar materials. In these systems, the polar discontinuity across the interface may drive an electronic reconstruction inducing free carriers at the interface. Here, we theoretically show that a metallic interface between a Mott-and a band-insulator can also form in the absence of a polar discontinuity. The condition for the appearance of such a metallic state is consistent with the classical Mott criterion: the metallic state is stable if the screening length falls below the effective Bohr radius of a particle-hole pair. In this case, the metallic state bears a remarkable similarity to the one found in polar/nonpolar heterostructures. On the other hand, if the screening length approaches the size of the effective Bohr radius, particles and holes are bound to each other resulting in an overall insulating phase. We analyze this metal-insulator transition, which is tunable by the dielectric constant, in the framework of the slave-boson mean-field theory for a lattice model with both onsite and long-range Coulomb interactions. We discuss ground-state properties and transport coefficients, which we derive in the relaxation-time approximation. Interestingly, we find that the metal-insulator transition is accompanied by a strong enhancement of the Seebeck coefficient in the band-insulator region in the vicinity of the interface. The implications of our theoretical findings for various experimental systems such as nonpolar (110) interfaces are also discussed. I.arXiv:1406.0275v1 [cond-mat.str-el]

Effect of Coulomb Interaction on Seebeck Coefficient of Organic Dirac Electron System $α$-(BEDT-TTF)$_2$I$_3$

“…and is added as a perturbation to H MF . This is treated within the T -matrix approximation to include the energy dependence with the relaxation time τ ν (ω) [22,25,49,52]. As a result, the retarded self-energy Σ R νσ (ω, k) and the damping constant γ νσ (ω, k) are obtained as follows:…”

Electric-field-driven Mott metal-insulator transition in correlated thin films: An inhomogeneous dynamical mean-field theory approach

“…13 This has stimulated the development of alternative methods. The Gutzwiller approximation [14][15][16] and slave boson techniques 17,18 have been used to treat the low-energy physics of bulk materials and -more recently -thin films [19][20][21][22][23][24] in the presence of an electric field. 21,22 The slave boson approach has been extended to allow access to higher-energy excitations 25 , while the Gutzwiller approximation only provides insight into the metallic state.…”