Electrical Properties of Insulator-Semiconductor Interfaces on III-V Compounds

Meiners, L. G.

doi:10.1007/978-1-4684-4835-1_4

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Cited by 6 publications

References 105 publications

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Metal‐Oxide‐Semiconductor Capacitor

Ng¹

2009

Complete Guide to Semiconductor Devices

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Metal‐Oxide‐Semiconductor Capacitor

Ng¹

2009

Complete Guide to Semiconductor Devices

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The effect of rapid thermal annealing on the electrical characteristics of InP MOS structures with a double oxide layer

Eftekhari

1995

Phys. Stat. Sol. (a)

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The electrical properties of double oxide layer InP MOS structures are analyzed. The first oxide layer (next to InP) is anodized and the second oxide layer is RF magnetron sputtered SiO2. The quality of as‐deposited oxide structures is not good. However, it is improved after rapid thermal annealing. The resistivity and breakdown electric field increase. The current conduction process and InP surface potential change after annealing. The oxide fixed charge density also decreases after annealing. Sputter created defects and partial removal of defects after annealing and changes in their distribution are used to explain the observations.

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DLTS study of GaAs MIS structures with plasma deposited insulator

Salman¹,

Korshunov²,

Vertoprakhov³

1996

Phys. Stat. Sol. (a)

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The results of a DLTS study of GaAs MIS structures with plasma deposited Si3N4 as insulator are given. It is established that the activation energy and the capture cross section of traps decrease with reverse bias and at large biases correspond to the respective parameters of bulk traps. A correlation is found between the DLTS spectra and the maximum HF capacitance of the MIS structure in the "accumulation" region. Experimental data are explained in the framework of a "unified defect model" by the change of the potential relief in a semiconductor as a result of a high-resistivity layer formed near the interface. The interpretation of the DLTS spectra of the GaAs MIS structures is discussed. MeTofloM HCrY H3YqaJIEICb GaAS MnH-CTPYKTYPbl C IIJIa3MeHbIM Si3N4 B Ka9eCTBe pi3JIeKTpIIKa. YCTaHOBJleHO, 9TO 3HeprKII aKTHBaqIlH H CeYeHHe 3aXBaTa JIOByIIIeK YMeHbIIIaIoTCX C YBeJIIIYeHHeM 06paTHOrO HaIIpXXeHIIII H IIpH 6onbmm CMeWeHEi XX COOTBeT-HCrY II MaKCHMaJIbHOii BMKOCTbIo MQn-CTPYKTYPbI B PeXHMe cco6orarqe~m>>. 3KCnepEi-MeHTaJIbHbIe AaHHbIe O6%IICHXIoTCII B PaMKaX <<06061qe~~oi MOAeJIIl Ae@KTOB>> M3MeHe-HHeM IIOTeHqIlaJIbHOrO peJIbe@a B IIOJIyIIpOBOAHHKe B pe3yJIbTaTe 06pa30BaHHX BMCOKOOM-HOrO CJIOII B6nH3H l p H H q b I pa3~ena. 06cym~ae~crr HHTepIIpeTaqkiR CneKTpOB HCrY G d S CTBYIOT napaMeTpaM 0 6 ' b e~~b l x noBymeK. HaiiAeHa Koppenaqm Mexqy BHAOM cnempa MJJII-CTPYKTYP.

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Electrical Properties of Insulator-Semiconductor Interfaces on III-V Compounds

Cited by 6 publications

References 105 publications

Metal‐Oxide‐Semiconductor Capacitor

Metal‐Oxide‐Semiconductor Capacitor

The effect of rapid thermal annealing on the electrical characteristics of InP MOS structures with a double oxide layer

DLTS study of GaAs MIS structures with plasma deposited insulator

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