Electrical properties of single CdTe nanowires

Abstract

Ion track, nanoporous membranes were employed as templates for the preparation of CdTe nanowires. For this purpose, electrochemical deposition from a bath containing Cd and Te ions was employed. This process leads to high aspect ratio CdTe nanowires, which were harvested and placed on a substrate with lithographically patterned, interdigitated electrodes. Focused ion beaminduced metallization was used to produce individual nanowires with electrical contacts and electrical measurements were performed on these individual nanowires. The influence of a bottom gate was investigated and it was found that surface passivation leads to improved transport properties.

Vapour–liquid–solid‐assisted growth of cadmium telluride nanowires and their field emission properties

“…Introduction: One-dimensional (1D) nanostructures gain importance as a building block for future electronic devices. Nanowires are one of the potential candidates from 1D nanostructure for electronic devices due to its high aspect ratio and nanometric dimension [1]. Cadmium telluride (CdTe) is one of the important II-VI semiconducting chalcogenide material with direct bandgap of 1.45 eV [2].…”