Electrical Switching of Tristate Antiferromagnetic Néel Order in 
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 Epitaxial Films

Cheng, Yang; Yu, Sisheng; Zhu, Menglin; Hwang, Jinwoo; Yang, Fengyuan

doi:10.1103/physrevlett.124.027202

Cited by 129 publications

(84 citation statements)

References 41 publications

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“…This sawtooth-like nature also persists for various τ P and t PtMn (see supplementary Fig. S5(b)-(d)), and closely resembles the switching characteristics observed in some previous works 40,41 . The present results suggest the existence of different driving forces, manifesting in distinct R Hall characteristics of PtMn with/without the HM layer.…”

Section: Resultssupporting

confidence: 88%

“…For a polycrystalline textured PtMn, these estimates intuitively imply the possible existence of an inhomogeneous multi-domain antiferromagnetic ground state configuration with a partial or dominant easy-plane magnetic anisotropy contribution, accounting for the observed 90°s witching. Next, we discuss the effect of possible interactions namely, the bulk or interfacial SOTs generated by spin-Hall effect in HM layer [22][23][24]26 , Néel SOTs specific to the AFM [37][38][39] , spin-transfer torque (STT) generated by spin-polarized conduction electrons in the AFM layer 55,56 , and thermal activation of antiferromagnetic grains 20,41 due to the effect of Joule heating. Owing to the negligible current flow through the oxidized Ru capping layer, we do not consider its contribution for both PtMn/Pt and PtMn/Ru structures.…”

Section: Discussionmentioning

confidence: 99%

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Spin-orbit torque switching of an antiferromagnetic metallic heterostructure

et al. 2020

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The ability to represent information using an antiferromagnetic material is attractive for future antiferromagnetic spintronic devices. Previous studies have focussed on the utilization of antiferromagnetic materials with biaxial magnetic anisotropy for electrical manipulation. A practical realization of these antiferromagnetic devices is limited by the requirement of material-specific constraints. Here, we demonstrate current-induced switching in a polycrystalline PtMn/Pt metallic heterostructure. A comparison of electrical transport measurements in PtMn with and without the Pt layer, corroborated by x-ray imaging, reveals reversible switching of the thermally-stable antiferromagnetic Néel vector by spin-orbit torques. The presented results demonstrate the potential of polycrystalline metals for antiferromagnetic spintronics.

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Section: Resultssupporting

confidence: 88%

Section: Discussionmentioning

confidence: 99%

Spin-orbit torque switching of an antiferromagnetic metallic heterostructure

et al. 2020

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“…consistent with the data obtained from the transport experiments presented in Refs. [12,13], where a change of R ⊥ is observed in Pt films. However, we interpret this observation as a local variation of the film resistivity which gives rise to a R ⊥ change R ⊥ with alternating sign for the different pulsing directions.…”

Section: Introductionmentioning

confidence: 94%

“…1(a). In this type of experiments, Cheng et al identified a "saw-tooth"-shaped contribution in R ⊥ measurements arising from the Pt layer for large current density [12], which is of nonmagnetic origin. It was found to be larger than the magnetic contribution to the transverse electrical response in some cases.…”

Section: Introductionmentioning

confidence: 99%

Resistive contribution in electrical-switching experiments with antiferromagnets

Matalla-Wagner

Schmalhorst

Reiss

et al. 2020

Phys. Rev. Research

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Recent research demonstrated the electrical switching of antiferromagnets via intrinsic spin-orbit torque or the spin Hall effect of an adjacent heavy metal layer. The electrical readout is typically realized by measuring the transverse anisotropic magnetoresistance at planar cross-or star-shaped devices with four or eight arms, respectively. Depending on the material, the current density necessary to switch the magnetic state can be large, often close to the destruction threshold of the device. We demonstrate that the resulting electrical stress changes the film resistivity locally and thereby breaks the fourfold rotational symmetry of the conductor. This symmetry breaking due to film inhomogeneity produces signals, that resemble the anisotropic magnetoresistance and is experimentally seen as a "saw-tooth"-shaped transverse resistivity. This artifact can persist over many repeats of the switching experiment and is not easily separable from the magnetic contribution. We discuss the origin of the artifact, elucidate the role of the film crystallinity, and propose approaches how to separate the resistive contribution from the magnetic contribution.

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“…In the existing emergent memory devices, oxygen redox effect, [1][2][3] nanofilament formation, [4][5][6][7] phase transition, [8][9][10] spin switching, [11][12][13][14][15][16] and ferroelectric switching [17][18][19] have been widely exploited to alter the resistance state. Recently, in the category of spin switching memory, memory bit cells based on antiferromagnet (AFM) have drawn increasing attentions by showing prospects of As numerous chemical and physical changes could be triggered by the electrical current injection, [34,38] it is of crucial importance to examine the correlation between the switching and the spin-related properties of the bilayer to unambiguously identify the spin-orbit torque driven Néel order switching in AFMI/Pt. These examinations could also greatly facilitate the design of AFMI/Pt-based memristor devices.…”

Section: Introductionmentioning

confidence: 99%

Current‐Induced Planar Resistive Switching Mediated by Oxygen Migration in NiO/Pt Bilayer

Zhou

Yang

Tang

et al. 2020

Adv Elect Materials

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faster writing speed, higher thermal stability, etc. while compared to their ferromagnetic counterparts. [20-23] One of the main obstacles impedes the development of AFM spin switching memory was the difficulty of reversing the Néel spin order due to the extraordinary large anisotropy field of AFM, which has been recently demonstrated to be eased by the current-induced spin-orbit torque. [24] For example, in the antiferromagnetic CuMnAs and Mn 2 Au, multistate electrical resistive switching has been achieved via the broken inversion symmetry-induced staggered spin-orbit torque. [25-29] The spin torque switching of AFM has soon been extended to the antiferromagnetic insulator (AFMI)/heavy metal (HM) bilayer systems such as NiO/Pt and α-Fe 2 O 3 /Pt in which the HM (Pt) is utilized to generate spin-orbit torque. [30-35] More remarkably, the current-induced multistate switching characteristic makes the AFM-based spintronic device appealing for neuromorphic computing as an artificial synapse, in the sense that one important prerequisite needs to be met in a synaptic device is to have a symmetric and linear relation between the device conductance and the number of input current pulses. [36] All these thrilling developments take along pressing need to establish the comprehensive understanding and fully control of the current-induced switching in AFM-based devices. However, intense debates are currently underway over the physical origin of the current-induced resistive switching in AFMI/Pt bilayers. The initial studies propose the scenario of Néel spin order switching to explain the switching of AFMI, which has been further backed up by the recent studies of imaging through X-ray magnetic linear dichroism [31,32] and longitudinal spin Seebeck effect. [33] On the other hand, other studies have found that the switching behavior in AFMI/Pt bilayers has nonmagnetic origins thus going beyond the scenario of Néel spin order switching. For example, Chiang's recent work on the NiO/Pt bilayer shows similar switching behaviors even without AFMI and suggests the Seebeck effect in Pt as an alternative explanation. [37] Moreover, Cheng et al. [34] and Zhang et al. [35] also reported nonmagnetic origin for the switching in the α-Fe 2 O 3 /Pt bilayers. All these works fuel raising concerns on the origin of resistive switching in AFMI/ Pt bilayers. New materials and mechanisms to retain electrically tunable resistance states are highly pursed to advance information technology. In this study, a novel scenario of current-induced planar resistive switching mediated by oxygen migration is unveiled in the NiO/Pt bilayers. Sawtooth-like switching is successfully realized in various crystalline NiO, and the switching amplitude monotonically increases with the Pt thickness. On the other hand, the critical switching current is found to be strongly correlated with the substrate thermal conductivity hence suggesting a thermal origin. By directly probing the Ni 2+ and O 2− distribution before and after switching via electron energy loss spectrum, ...

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Electrical Switching of Tristate Antiferromagnetic Néel Order in α−Fe2O3 Epitaxial Films

Cited by 129 publications

References 41 publications

Spin-orbit torque switching of an antiferromagnetic metallic heterostructure

Spin-orbit torque switching of an antiferromagnetic metallic heterostructure

Resistive contribution in electrical-switching experiments with antiferromagnets

Current‐Induced Planar Resistive Switching Mediated by Oxygen Migration in NiO/Pt Bilayer

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