Electrically pumped ultraviolet ZnO diode lasers on Si

Chu, Sheng; Olmedo, Mario; Zheng, Youdou; Kong, Jizhou; Liu, Jianlin

doi:10.1063/1.3012579

Cited by 277 publications

(144 citation statements)

References 21 publications

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“…The ZnO seed layers were rinsed with deionized (DI) water and immersed in a mixture of aqueous 0. 3 ] were used as the Al, Ga, and In dopant precursors, respectively. In the mixture, the Al/Zn, Ga/Zn, In/Zn ratios were fixed at 2.0 at %.…”

Section: Methodsmentioning

confidence: 99%

See 1 more Smart Citation

Effects of Doping with Al, Ga, and In on Structural and Optical Properties of ZnO Nanorods Grown by Hydrothermal Method

Kim¹,

Nam²,

Park³

et al. 2013

Bulletin of the Korean Chemical Society

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The structural and optical properties of the ZnO, Al-doped ZnO, Ga-doped ZnO, and In-doped ZnO nanorods were investigated using field-emission scanning electron microscopy, X-ray diffraction, photoluminescence (PL) and ultraviolet-visible spectroscopy. All the nanorods grew with good alignment on the ZnO seed layers and the ZnO nanorod dimensions could be controlled by the addition of the various dopants. For instance, the diameter of the nanorods decreased with increasing atomic number of the dopants. The ratio between the nearband-edge emission (NBE) and the deep-level emission (DLE) intensities (I NBE /I DLE ) obtained by PL gradually decreased because the DLE intensity from the nanorods gradually increased with increase in the atomic number of the dopants. We found that the dopants affected the structural and optical properties of the ZnO nanorods including their dimensions, lattice constants, residual stresses, bond lengths, PL properties, transmittance values, optical band gaps, and Urbach energies.

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Section: Methodsmentioning

confidence: 99%

“…1 Therefore, ZnO is an excellent candidate for application in light emitting diodes, 2 laser diodes, 3 field emission devices, 4 chemical sensors, 5 and solar cells. 6 In recent years, applications of ZnO nanostructures, particularly nanorods, in dye sensitized solar cells and thermoelectronics have attracted increasing interest.…”

Section: Introductionmentioning

confidence: 99%

Effects of Doping with Al, Ga, and In on Structural and Optical Properties of ZnO Nanorods Grown by Hydrothermal Method

Kim¹,

Nam²,

Park³

et al. 2013

Bulletin of the Korean Chemical Society

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show abstract

“…ZnO nanostructures have been used for the fabrication of optical, electrical, and piezoelectric devices e.g. light emitting diodes [11], solar cells [18], laser diodes [19], and UV photo detectors [20] etc., a recent comprehensive review of variety of issues related to Schottky contacts on ZnO thin film has been published [21].…”

Section: Introductionmentioning

confidence: 99%

Analysis of junction properties of gold–zinc oxide nanorods-based Schottky diode by means of frequency dependent electrical characterization on textile

et al. 2014

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Moreover, current density-voltage (J-V) was measured to know the performance of present Schottky diode. The effect of native defects at the interface was also studied by using cathodoluminescence spectroscopy by varying different accelerating voltage. The textile substrate was used for the growth of ZnO nanorods by using the aqueous chemical growth (ACG) method and Schottky diode fabrication. Diode fabrication on textile fabric is a step forward towards the fabrication of electronic devices on non-conventional, economical, soft, light weight, flexible, wearable, washable, recyclable, reproducible and nontoxic substrate.

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“…therein). In the case of Sb, following the report of Sb-doped p-type ZnO by Aoki et al in 2002 [2] and further work by other authors [3][4][5][6], recently the realization of a wide range of optoelectronic devices incorporating pZnO:Sb layers have been reported, including homo-and heterojunction photodiodes [7][8], ultraviolet (UV) light emitting diodes (LEDs) [9][10][11][12], and UV lasers [13].While technological applications of p-type ZnO seem thus to have come within reach, the nature of the acceptors in P, As or Sb-doped ZnO continues to be disputed in the literature. From a simple viewpoint of chemical bonding, the substitution of O 2− cations in ZnO by P 3− , As 3− or Sb 3− should create fully ionized acceptors.…”

mentioning

confidence: 99%

Direct evidence for Sb as a Zn site impurity in ZnO

Wahl

Correia

Mendonça

et al. 2009

Applied Physics Letters

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The lattice location of ion implanted antimony in zinc oxide has been determined by means of β − emission channeling from the radioactive 124 Sb isotope. Following 30 keV implantation of 124 Sb into a single-crystalline ZnO sample to a fluence of 1×10 14 cm −2 , the angular-dependent emission rate of β − particles around several crystallographic directions was measured with a position-sensitive Si detector. The majority of Sb was found to occupy Zn sites, with the possible fraction on O sites being at maximum 5-6%. To date, the group V element antimony is one of the elements which have been used as p-type dopants in the II-VI semiconductor zinc oxide, the others being N, P and As (cf. Ref.[1] and Refs. therein). In the case of Sb, following the report of Sb-doped p-type ZnO by Aoki et al in 2002 [2] and further work by other authors [3][4][5][6], recently the realization of a wide range of optoelectronic devices incorporating pZnO:Sb layers have been reported, including homo-and heterojunction photodiodes [7][8], ultraviolet (UV) light emitting diodes (LEDs) [9][10][11][12], and UV lasers [13].While technological applications of p-type ZnO seem thus to have come within reach, the nature of the acceptors in P, As or Sb-doped ZnO continues to be disputed in the literature. From a simple viewpoint of chemical bonding, the substitution of O 2− cations in ZnO by P 3− , As 3− or Sb 3− should create fully ionized acceptors. However, due to the large mismatch of the ionic radii of P 3− (2.12 Å), As 3− (2.22 Å) and Sb 3− (2.45 Å) with the ionic radius of O 2− (1.38 Å) it was argued that those impurities should have a low solubility substituting for O [14]. Moreover, theory suggests that the energy levels of P, As and Sb replacing O are located deep in the band gap of ZnO [15][16]. In order to explain the p-type character of ZnO following As and Sb doping it was suggested that the acceptor action is actually due to As Zn -2V Zn or Sb Zn -2V Zn complexes, where an As or Sb atom occupies a Zn "anti-site" and is decorated with two Zn vacancies [16][17][18][19]. However, a complex acceptor model for P, As or Sb in ZnO is strongly disputed by some authors [20][21][22][23][24].Obviously knowledge on the lattice location of the group V elements in ZnO is crucial in order to assess the related mechanism of p-type doping. We have previously determined the lattice sites of ion implanted As by means of conversion electron emission channeling from radioactive 73 As [25][26][27] and found that As does not occupy substitutional O sites but mostly substitutional Zn sites. In this work we report on the lattice location of ion implanted radioactive 124 Sb (t 1/2 = 60.3 d) using β − emission channeling and we present direct experimental evidence that Sb preferentially occupies Zn sites. Emission channeling [28] is based on the fact that charged particles from nuclear decay (α, β − , β + , conversion electrons) experience channeling or blocking effects along major crystallographic axes and planes. The resulting anisotropic emission yield p...

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Electrically pumped ultraviolet ZnO diode lasers on Si

Cited by 277 publications

References 21 publications

Effects of Doping with Al, Ga, and In on Structural and Optical Properties of ZnO Nanorods Grown by Hydrothermal Method

Effects of Doping with Al, Ga, and In on Structural and Optical Properties of ZnO Nanorods Grown by Hydrothermal Method

Analysis of junction properties of gold–zinc oxide nanorods-based Schottky diode by means of frequency dependent electrical characterization on textile

Direct evidence for Sb as a Zn site impurity in ZnO

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