Electrically pumped waveguide lasing from ZnO nanowires

Abstract

Ultraviolet semiconductor lasers are widely used for applications in photonics, information storage, biology and medical therapeutics. Although the performance of gallium nitride ultraviolet lasers has improved significantly over the past decade, demand for lower costs, higher powers and shorter wavelengths has motivated interest in zinc oxide (ZnO), which has a wide direct bandgap and a large exciton binding energy. ZnO-based random lasing has been demonstrated with both optical and electrical pumping, but random lasers suffer from reduced output powers, unstable emission spectra and beam divergence. Here, we demonstrate electrically pumped Fabry-Perot type waveguide lasing from laser diodes that consist of Sb-doped p-type ZnO nanowires and n-type ZnO thin films. The diodes exhibit highly stable lasing at room temperature, and can be modelled with finite-difference time-domain methods.

Lasing from individual GaAs-AlGaAs core-shell nanowires up to room temperature

“…Finally, electrical injection would be essential for NW lasers operating in an integrated setting. To date, only a few works report lasing from electrically excited NWs 4,43 . However, radial p-n junctions in GaAs-based NWs exist driven mostly by potential applications in NW photovoltaics 44 .…”

Design of Nanowire Optical Cavities as Efficient Photon Absorbers

“…The small mode volume, localized resonant modes and long photon lifetimes of subwavelength nanowire (NW) cavities have enabled diverse optoelectronic applications, including ultrasmall light sources, [1][2][3][4][5] dielectric or plasmonic waveguides, [6][7][8][9] and highly sensitive optical probes. [10][11] In addition, semiconductor NW photovoltaics (PV) are emerging as a promising platform for the next generation solar cells that require a high efficiency at costs approaching grid parity.…”

Nitrogen deep accepters in ZnO nanowires induced by ammonia plasma

“…Up to now, their excellent optical and electrical properties have been reported widely, and the performance of ZnO-based devices has been improved significantly. [1][2][3][4][5] However, there is still a long way towards the realization of practical ZnO-based optoelectronic devices. The main obstacle lies in the lack of reliable p-type doping in ZnO.…”