Electrically tunable non-radiative lifetime in WS<sub>2</sub>/WSe<sub>2</sub> heterostructures

Wang, Anran; Wu, Xingguang; Zhao, Siwen; Han, Zheng Vitto; Shi, Yi; Cerullo, Giulio; Wang, Fengqiu

doi:10.1039/d4nr01982b

Nanoscale

2024

DOI: 10.1039/d4nr01982b

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Electrically tunable non-radiative lifetime in WS₂/WSe₂ heterostructures

Anran Wang,

Xingguang Wu,

Siwen Zhao

et al.

Abstract: We have investigated the pronounced gate-dependent lifetimes in WS2/WSe2 heterostructures, which are related to the doping-controlled competition between different recombination pathways.

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Phonon-assisted Auger decay of excitons in doped transition metal dichalcogenide monolayers

Scharf,

Perebeinos

2024

The Journal of Chemical Physics

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The competition between the radiative and nonradiative lifetimes determines the optical quantum yield and plays a crucial role in the potential optoelectronic applications of transition metal dichalcogenides (TMDCs). Here, we show that, in the presence of free carriers, an additional nonradiative decay channel opens for excitons in TMDC monolayers. Although the usual Auger decay channel is suppressed at low doping levels by the simultaneous momentum and energy conservation laws, exciton–phonon coupling relaxes this suppression. By solving a Bethe–Salpeter equation, we calculate the phonon-assisted Auger decay rates in four typical TMDCs as a function of doping, temperature, and dielectric environment. We find that even for a relatively low doping of 1012 cm−2, the nonradiative lifetime ranges from 16 to 165 ps in different TMDCs, offering competition to the radiative decay channel.

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Phonon-assisted Auger decay of excitons in doped transition metal dichalcogenide monolayers

Scharf,

Perebeinos

2024

The Journal of Chemical Physics

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Electrically tunable non-radiative lifetime in WS₂/WSe₂ heterostructures

Abstract: We have investigated the pronounced gate-dependent lifetimes in WS2/WSe2 heterostructures, which are related to the doping-controlled competition between different recombination pathways.

Cited by 1 publication

References 42 publications

Phonon-assisted Auger decay of excitons in doped transition metal dichalcogenide monolayers

Phonon-assisted Auger decay of excitons in doped transition metal dichalcogenide monolayers

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Electrically tunable non-radiative lifetime in WS2/WSe2 heterostructures

Abstract: We have investigated the pronounced gate-dependent lifetimes in WS2/WSe2 heterostructures, which are related to the doping-controlled competition between different recombination pathways.

Cited by 1 publication

References 42 publications

Phonon-assisted Auger decay of excitons in doped transition metal dichalcogenide monolayers

Phonon-assisted Auger decay of excitons in doped transition metal dichalcogenide monolayers

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Electrically tunable non-radiative lifetime in WS₂/WSe₂ heterostructures