1976
DOI: 10.1021/ac60368a035
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Electrochemical and surface characteristics of tin oxide and indium oxide electrodes

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Cited by 198 publications
(141 citation statements)
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“…28 It should be noted that the onset of cathodic current on these ITO films has been attributed to partial reduction of surface metal oxides followed by either H + reduction or further reduction of the metal oxides. 29 The microchannel containing the BPEs (Scheme 1b) was filled with air-saturated 0.10 M acetate buffer (pH 4.0). Acetate buffer was used instead of a strong acid such as HClO 4 or H 2 SO 4 because the former is more compatible with ITO and Ag.…”
Section: * S Supporting Informationmentioning
confidence: 99%
“…28 It should be noted that the onset of cathodic current on these ITO films has been attributed to partial reduction of surface metal oxides followed by either H + reduction or further reduction of the metal oxides. 29 The microchannel containing the BPEs (Scheme 1b) was filled with air-saturated 0.10 M acetate buffer (pH 4.0). Acetate buffer was used instead of a strong acid such as HClO 4 or H 2 SO 4 because the former is more compatible with ITO and Ag.…”
Section: * S Supporting Informationmentioning
confidence: 99%
“…However. 50 % of iron tetraphenylporphyrine tetracarboxylic acid which had been condensed onto amino silane on the surface was removed by one week's extraction with DMF [765]. Finklea and Murray reported [757] that the organosilane on the surface was not oxidized by holes produced in the valence band by UV irradiation.…”
Section: ° Nhetmentioning
confidence: 99%
“…Over the years, OTEs have been prepared by coating thin films of metals (e.g., gold and platinum), carbon, and metal oxides onto glass or quartz substrates. Of these, indium tin oxide (ITO) films have been the most widely used (11,12). ITO is a Sn(IV)-doped, In 2 O 3 -based n-type semiconductor, which, along with ZnO, has been extensively applied for >20 years to electrooptical devices and photovoltaics (13).…”
mentioning
confidence: 99%