2012
DOI: 10.1021/jp304419a
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Electrochemical Charge Storage Properties of Vertically Aligned Carbon Nanotube Films: Effects of Thermal Oxidation

Abstract: Vertically aligned carbon nanotube (VACNT) films were synthesized and investigated in vitro for their potential use as a neural stimulation electrode. Materials and electrochemical (EC) characterization (cyclic voltammetry, electrochemical impedance spectroscopy, and high-rate potential transient measurements) were performed before and after flash oxidation in O 2 at various temperatures and over a wide frequency range. The results showed distinct EC behavior within three ranges of treatment temperature. Oxida… Show more

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Cited by 5 publications
(3 citation statements)
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“…23 To facilitate the transfer of the CNT forest, the as-grown CNT forest on Si wafer is annealed in air on a hotplate at 540 C for 15 min to partially oxidize the region of the CNT forest connecting to iron seeds. 30 It is worth noting that the Au-CNT forest is upside down after the dry-transfer step. The intertwined top section of the original Au-CNT forest serves as a conductive network at the base of the crumpled Au-CNT forest electrode.…”
Section: Resultsmentioning
confidence: 99%
“…23 To facilitate the transfer of the CNT forest, the as-grown CNT forest on Si wafer is annealed in air on a hotplate at 540 C for 15 min to partially oxidize the region of the CNT forest connecting to iron seeds. 30 It is worth noting that the Au-CNT forest is upside down after the dry-transfer step. The intertwined top section of the original Au-CNT forest serves as a conductive network at the base of the crumpled Au-CNT forest electrode.…”
Section: Resultsmentioning
confidence: 99%
“…Ye et al [99] electrodeposited molybdenum oxide (MoO x ) on VA-VNTs forests to develop electrochemical sensors for the detection of bromate. Brown et al [100] investigated the potential use of VA-CNTs as neural stimulation electrodes. They performed flash oxidation (short exposition time of 20 min) of the VA-CNTs in O 2 (100 sccm) at various temperatures (between 200 °C and 500 °C) aiming at improving their charge storage properties.…”
Section: Reviewmentioning
confidence: 99%
“…We previously estimated the contact conductivity of a CNT/CNT interface from the in-plane conductivity of an uncapped CNT forest on silicon carbide (SiC). For CNT forests formed by the catalyst-CVD method, although their distinctive properties are expected to be useful for VLSI vias, , supercapacitors, and so forth, many challenges must be overcome, for example, the existence of voids and bundles, wavy parts, and entangled parts on their tops, the existence of the metal catalyst as an impurity, and the differentiation of CNT chiralities. A CNT forest formed on SiC by the surface decomposition method , is nearly ideally dense and highly uniform with no entangled parts on the top.…”
mentioning
confidence: 99%