Electrodeposited MoS2 as electrocatalytic counter electrode for quantum dot- and dye-sensitized solar cells

Since the Nobel Prize was awarded in 2010 to Andre Geim and Konstantin Novoselov for their work on graphene, research in two-dimensional materials has attracted much attention. Transition metal dichalcogenides, which consist of transition metal atoms and chalcogen atoms other than oxygen, have potential applications in various electronics fields. However, there have been few observations of the transition processes of these electronic states, and the mechanisms of their functions are still unclear. In this study, the carrier dynamics of mechanically exfoliated MoS2 film were observed using femtosecond transient absorption microscopy. The time constant of carrier relaxation at the thin region was shorter than those of the thick. Electronic state differences and carrier trapping on the surface state regulate the lifetime of carriers in MoS2.

show abstract

“…The control of excitons in these micro-spaces will be available for many applications in the future. [27][28][29][30] SG1029-3…”

Section: Resultsmentioning

confidence: 99%

Observation of carrier dynamics in MoS₂ thin layer by femtosecond transient absorption microscopy

Katayama

Yamamoto

Fujita

et al. 2023

Jpn. J. Appl. Phys.

View full text Add to dashboard Cite

show abstract

“…Quy et al [ 128 ] produced MoS 2 films on FTO substrates employing potentiostatic electrodeposition in the island growth mode. As the electrodeposition (ED) time approached 40 min, the MoS 2 nanoparticle clusters expanded and thickened but still had nanopores separating them.…”

Section: Transition Metal Chalcogenides (Tmcs) Compounds-based Ce Cat...mentioning

confidence: 99%

“…One can see that most QDSSC publications have higher values of PCE with TMS-based CE such as MoS 2 , CuS, Cu 1.8 S, CoS n and NiS n, , compared with Pt-based CE. Figure 13 reveals V oc Vs J sc for both TMS-based CE and Pt-based CE, which demonstrates that the V oc and J sc values of TMS-based CE are higher than those of Pt-based CE leading to higher PCE values due to the corrosion and chemical adsorption by redox polysulfide electrolyte couple onto the surface of Pt CE [ 126 , 127 , 128 , 129 ].…”

Section: Transition Metal Chalcogenides (Tmcs) Compounds-based Ce Cat...mentioning

confidence: 99%

A Review of Transition Metal Sulfides as Counter Electrodes for Dye-Sensitized and Quantum Dot-Sensitized Solar Cells

et al. 2023

View full text Add to dashboard Cite

Third-generation solar cells, including dye-sensitized solar cells (DSSCs) and quantum dot-sensitized solar cells (QDSSCs), have been associated with low-cost material requirements, simple fabrication processes, and mechanical robustness. Hence, counter electrodes (CEs) are a critical component for the functionality of these solar cells. Although platinum (Pt)-based CEs have been dominant in CE fabrication, they are costly and have limited market availability. Therefore, it is important to find alternative materials to overcome these issues. Transition metal chalcogenides (TMCs) and transition metal dichalcogenides (TMDs) have demonstrated capabilities as a more cost-effective alternative to Pt materials. This advantage has been attributed to their strong electrocatalytic activity, excellent thermal stability, tunability of bandgap energies, and variable crystalline morphologies. In this study, a comprehensive review of the major components and working principles of the DSSC and QDSSC are presented. In developing CEs for DSSCs and QDSSCs, various TMS materials synthesized through several techniques are thoroughly reviewed. The performance efficiencies of DSSCs and QDSSCs resulting from TMS-based CEs are subjected to in-depth comparative analysis with Pt-based CEs. Thus, the power conversion efficiency (PCE), fill factor (FF), short circuit current density (Jsc) and open circuit voltage (Voc) are investigated. Based on this review, the PCEs for DSSCs and QDSSCs are found to range from 5.37 to 9.80% (I−/I3− redox couple electrolyte) and 1.62 to 6.70% (S−2/Sx− electrolyte). This review seeks to navigate the future direction of TMS-based CEs towards the performance efficiency improvement of DSSCs and QDSSCs in the most cost-effective and environmentally friendly manner.

show abstract

“…Atomically thin 2D materials with strong spin–orbit interaction are attracting significant interest due to their novel optoelectronic, , electrochemical, quantum, , electrical, and optical properties. − Among these 2D materials, transition metal dichalcogenides (TMDs) are an exciting class of materials that exhibit many interesting properties, including indirect to direct band gaps at monolayer limit, large exciton binding energies, and charge density waves that arise from quantum confinement effects . In these materials, transition-metal atoms are sandwiched by identical chalcogen atoms (S, Se, Te) at the top and bottom layers.…”

Section: Introductionmentioning

confidence: 99%

Monolayer Excitonic Semiconductors Integrated with Au Quasi-Periodic Nanoterrace Morphology on Fused Silica Substrates for Light-Emitting Devices

Chen

Blei

et al. 2020

ACS Appl. Nano Mater.

View full text Add to dashboard Cite

Two-dimensional transition metal dichalcogenides (TMDs) have a promising future in the nanophotonics field due to their unique optoelectronic properties such as large exciton binding energies and carrier mobility. Among these properties, monolayer TMDs exhibit enhanced photoluminescence (PL) by utilizing micro-/nanostructure surface plasmon polariton (SPP) modes. In this work, we present a unique technique to achieve substantial PL enhancement by integrating MoS2 monolayers to gold quasi-periodic nanoterrace morphology with gradient periods on fused silica substrates. Gold quasi-periodic nanostructures were fabricated through cost-effective and fast ion bombardment with iron co-deposition followed by a gold coating technique, and monolayers were deposited by a polymer-assisted technique. Our results show clear evidence that the light emission is enhanced due to the SPP modes produced by the quasi-periodic nanoterrace morphology. Comprehensive spectroscopy studies were performed on monolayer flakes with different laser polarizations, morphology periods, and temperatures to offer detailed insights on the mechanism behind PL enhancement. Together with numerical simulations, our results provided a basis for understanding the PL enhancement effects and shed light on future directions of high-efficiency light-emitting devices such as diodes, lasers, and heterostructure solar cells based on TMD monolayers.

show abstract

Electrodeposited MoS2 as electrocatalytic counter electrode for quantum dot- and dye-sensitized solar cells

Cited by 43 publications

References 56 publications

Observation of carrier dynamics in MoS₂ thin layer by femtosecond transient absorption microscopy

Observation of carrier dynamics in MoS₂ thin layer by femtosecond transient absorption microscopy

A Review of Transition Metal Sulfides as Counter Electrodes for Dye-Sensitized and Quantum Dot-Sensitized Solar Cells

Monolayer Excitonic Semiconductors Integrated with Au Quasi-Periodic Nanoterrace Morphology on Fused Silica Substrates for Light-Emitting Devices

Contact Info

Product

Resources

About

Electrodeposited MoS2 as electrocatalytic counter electrode for quantum dot- and dye-sensitized solar cells

Cited by 43 publications

References 56 publications

Observation of carrier dynamics in MoS2 thin layer by femtosecond transient absorption microscopy

Observation of carrier dynamics in MoS2 thin layer by femtosecond transient absorption microscopy

A Review of Transition Metal Sulfides as Counter Electrodes for Dye-Sensitized and Quantum Dot-Sensitized Solar Cells

Monolayer Excitonic Semiconductors Integrated with Au Quasi-Periodic Nanoterrace Morphology on Fused Silica Substrates for Light-Emitting Devices

Contact Info

Product

Resources

About

Observation of carrier dynamics in MoS₂ thin layer by femtosecond transient absorption microscopy

Observation of carrier dynamics in MoS₂ thin layer by femtosecond transient absorption microscopy